50-GHz-bandwidth Electro-absorption Modulator with Membrane InGaAsP Lateral p-i-n Diode on Si Platform

Tatsurou Hiraki, Takuma Aihara, Yoshiho Maeda, Takuro Fujii, Tai Tsuchizawa, Kiyoto Takahata, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A 300-μm-long membrane InGaAsP electro-absorption modulator (EAM) integrated on Si-waveguide circuits exhibits a 3-dB bandwidth of 50 GHz. The EAM shows high linearity, low loss (< 4 dB), and eye openings for 112-Gbit/s PAM4 signals at wavelengths from 1570 to 1600 nm.

Original languageEnglish
Title of host publication2020 European Conference on Optical Communications, ECOC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728173610
DOIs
Publication statusPublished - 2020 Dec
Event46th European Conference on Optical Communications, ECOC 2020 - Virtual, Brussels, Belgium
Duration: 2020 Dec 62020 Dec 10

Publication series

Name2020 European Conference on Optical Communications, ECOC 2020

Conference

Conference46th European Conference on Optical Communications, ECOC 2020
Country/TerritoryBelgium
CityVirtual, Brussels
Period20/12/620/12/10

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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