5.25 GHz linear CMOS power amplifier with a diode-connected NMOS bias circuit

Shihai He, Yorikatsu Uchida, Xin Yang, Qing Liu, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this paper, a 5.25GHz linear CMOS power amplifier (PA) with an integrated diode is presented. The proposed technique improves the linearity of the power amplifier by a diode-connected NMOS transistor. The NMOS diode is effective to suppress both the AM-AM distortion and AM-PM distortion. To verify this concept, the power amplifier is simulated with TSMC 0.13-μm CMOS process. With a power supply of 3.3 V, the proposed power amplifier exhibits a maximum IMD improvement of 25 dB with a PAE of 38.2 % at an output P1dB of 19.6 dBm.

Original languageEnglish
Title of host publication2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings
Pages1912-1915
Number of pages4
Volume5
DOIs
Publication statusPublished - 2012
Event2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Shenzhen
Duration: 2012 May 52012 May 8

Other

Other2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012
CityShenzhen
Period12/5/512/5/8

Fingerprint

Power amplifiers
Diodes
Networks (circuits)
Transistors

Keywords

  • adaptive bias
  • CMOS power amplifier
  • Integrated Diode
  • intermodulation distortion

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

He, S., Uchida, Y., Yang, X., Liu, Q., & Yoshimasu, T. (2012). 5.25 GHz linear CMOS power amplifier with a diode-connected NMOS bias circuit. In 2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings (Vol. 5, pp. 1912-1915). [6230444] https://doi.org/10.1109/ICMMT.2012.6230444

5.25 GHz linear CMOS power amplifier with a diode-connected NMOS bias circuit. / He, Shihai; Uchida, Yorikatsu; Yang, Xin; Liu, Qing; Yoshimasu, Toshihiko.

2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings. Vol. 5 2012. p. 1912-1915 6230444.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

He, S, Uchida, Y, Yang, X, Liu, Q & Yoshimasu, T 2012, 5.25 GHz linear CMOS power amplifier with a diode-connected NMOS bias circuit. in 2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings. vol. 5, 6230444, pp. 1912-1915, 2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012, Shenzhen, 12/5/5. https://doi.org/10.1109/ICMMT.2012.6230444
He S, Uchida Y, Yang X, Liu Q, Yoshimasu T. 5.25 GHz linear CMOS power amplifier with a diode-connected NMOS bias circuit. In 2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings. Vol. 5. 2012. p. 1912-1915. 6230444 https://doi.org/10.1109/ICMMT.2012.6230444
He, Shihai ; Uchida, Yorikatsu ; Yang, Xin ; Liu, Qing ; Yoshimasu, Toshihiko. / 5.25 GHz linear CMOS power amplifier with a diode-connected NMOS bias circuit. 2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings. Vol. 5 2012. pp. 1912-1915
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