79 GHz CMOS power amplifier considering time- and temperature-degradation model

Takeshi Yoshida, Kyoya Takano, Chen Yang Li, Kosuke Katayama, Shuhei Amakawa, Minoru Fujishima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper reports a CMOS power amplifier (PA) designed considering the performance degradation of MOSFETs caused by both temperature variations and the hot-carrier effect. A small-signal MOSFET model that reproduces the transient degradation caused by the hot-carrier effect is proposed. A 79 GHz CMOS PA was designed utilizing the proposed small-signal model. Simulation results agreed well with the measurement results of the PA fabricated with a 40 nm CMOS technology. It achieved the small-signal gain variations of below 0.7 dB and the OP1dB degradation of less than 0.8 dB in the temperature range of 0°C to 100°C.

Original languageEnglish
Title of host publication2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages637-639
Number of pages3
ISBN (Electronic)9784902339314
Publication statusPublished - 2014 Mar 25
Externally publishedYes
Event2014 Asia-Pacific Microwave Conference, APMC 2014 - Sendai, Japan
Duration: 2014 Nov 42014 Nov 7

Other

Other2014 Asia-Pacific Microwave Conference, APMC 2014
CountryJapan
CitySendai
Period14/11/414/11/7

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Keywords

  • Hot-carrier effect
  • Millimeter-wave
  • Power amplifier
  • Small-signal model
  • Temperature compensation

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Yoshida, T., Takano, K., Li, C. Y., Katayama, K., Amakawa, S., & Fujishima, M. (2014). 79 GHz CMOS power amplifier considering time- and temperature-degradation model. In 2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014 (pp. 637-639). [7067862] Institute of Electrical and Electronics Engineers Inc..