79GHz CMOS power amplifier using temperature compensation bias

Mizuki Motoyoshi; Kyoya Takano; Takeshi Yoshida; Kosuke Katayama; Shuhei Amakawa; Minoru Fujishima

doi:10.1109/EuMIC.2014.6997788

79GHz CMOS power amplifier using temperature compensation bias

Mizuki Motoyoshi, Kyoya Takano, Takeshi Yoshida, Kosuke Katayama, Shuhei Amakawa, Minoru Fujishima

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We proposed a temperature compensation method for a CMOS power amplifier (PA) without an external feedback circuit. The 79GHz PA using temperature compensation bias was fabricated using 40nm CMOS technology and suppressed the variation of the small-signal gain and the degradation of linearity to within 0.6dB in the temperature range from 10 to 100C with a fixed bias voltage. The PA using temperature compensation bias achieved a small-signal gain of 6.0dB, a 23.5GHz bandwidth and a saturated output power (Psat) of 6.3dBm with 24.8mW power consumption at 100C.

Original language	English
Title of host publication	European Microwave Week 2014
Subtitle of host publication	"Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	49-52
Number of pages	4
ISBN (Electronic)	9782874870361
DOIs	https://doi.org/10.1109/EuMIC.2014.6997788
Publication status	Published - 2014 Dec 23
Externally published	Yes
Event	9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014 - Rome, Italy Duration: 2014 Oct 6 → 2014 Oct 7

Publication series

Name	European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference

Conference

Conference	9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014
Country	Italy
City	Rome
Period	14/10/6 → 14/10/7

Keywords

CMOS
automotive radar
millimeter wave
power amplifier
temperature compensation

ASJC Scopus subject areas

Computer Networks and Communications
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EuMIC.2014.6997788

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Cite this

Motoyoshi, M., Takano, K., Yoshida, T., Katayama, K., Amakawa, S., & Fujishima, M. (2014). 79GHz CMOS power amplifier using temperature compensation bias. In European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference (pp. 49-52). [6997788] (European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EuMIC.2014.6997788

79GHz CMOS power amplifier using temperature compensation bias. / Motoyoshi, Mizuki; Takano, Kyoya; Yoshida, Takeshi; Katayama, Kosuke; Amakawa, Shuhei; Fujishima, Minoru.

European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2014. p. 49-52 6997788 (European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Motoyoshi, M, Takano, K, Yoshida, T, Katayama, K, Amakawa, S & Fujishima, M 2014, 79GHz CMOS power amplifier using temperature compensation bias. in European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference., 6997788, European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference, Institute of Electrical and Electronics Engineers Inc., pp. 49-52, 9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014, Rome, Italy, 14/10/6. https://doi.org/10.1109/EuMIC.2014.6997788

Motoyoshi M, Takano K, Yoshida T, Katayama K, Amakawa S, Fujishima M. 79GHz CMOS power amplifier using temperature compensation bias. In European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc. 2014. p. 49-52. 6997788. (European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference). https://doi.org/10.1109/EuMIC.2014.6997788

Motoyoshi, Mizuki ; Takano, Kyoya ; Yoshida, Takeshi ; Katayama, Kosuke ; Amakawa, Shuhei ; Fujishima, Minoru. / 79GHz CMOS power amplifier using temperature compensation bias. European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 49-52 (European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference).

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abstract = "We proposed a temperature compensation method for a CMOS power amplifier (PA) without an external feedback circuit. The 79GHz PA using temperature compensation bias was fabricated using 40nm CMOS technology and suppressed the variation of the small-signal gain and the degradation of linearity to within 0.6dB in the temperature range from 10 to 100C with a fixed bias voltage. The PA using temperature compensation bias achieved a small-signal gain of 6.0dB, a 23.5GHz bandwidth and a saturated output power (Psat) of 6.3dBm with 24.8mW power consumption at 100C.",

keywords = "CMOS, automotive radar, millimeter wave, power amplifier, temperature compensation",

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AU - Fujishima, Minoru

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AB - We proposed a temperature compensation method for a CMOS power amplifier (PA) without an external feedback circuit. The 79GHz PA using temperature compensation bias was fabricated using 40nm CMOS technology and suppressed the variation of the small-signal gain and the degradation of linearity to within 0.6dB in the temperature range from 10 to 100C with a fixed bias voltage. The PA using temperature compensation bias achieved a small-signal gain of 6.0dB, a 23.5GHz bandwidth and a saturated output power (Psat) of 6.3dBm with 24.8mW power consumption at 100C.

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