80-GHz-band low-power sub-harmonic mixer IC with a bottom-LO-configuration in 130-nm SiGe BiCMOS

Xin Yang, Xiao Xu, Takayuki Shibata, Toshihiko Yoshimasu

Research output: Contribution to journalArticle


In this paper, a W-band (80 GHz) sub-harmonic mixer (SHM) IC is designed, fabricated and measured in 130-nm SiGe BiCMOS technology. The presented SHM IC makes use of a common emitter common collector transistor pair structure with a bottom-LO-configuration to decrease the LO power requirement and a tail current source to flatten the conversion gain. On-chip Marchand balun is designed for W-band on-wafer measurements. The SHM IC presented in this paper has exhibited a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of only −7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA at a supply voltage of 3.3 V.

Original languageEnglish
Pages (from-to)1-10
Number of pages10
JournalInternational Journal of Microwave and Wireless Technologies
Publication statusAccepted/In press - 2016 Mar 28



  • 130-nm SiGe BiCMOS
  • Bottom-LO-configuratoin
  • Low power
  • Marchand Balun
  • Sub-harmonic mixer
  • W-band

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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