90 Gb/s hybrid integrated photoreceiver module with high speed 1.5 μm-band QD-SOA

A. Matsumoto; T. Umezawa; K. Akahane; A. Kanno; N. Yamamoto; Tetsuya Kawanishi

90 Gb/s hybrid integrated photoreceiver module with high speed 1.5 μm-band QD-SOA

A. Matsumoto, T. Umezawa, K. Akahane, A. Kanno, N. Yamamoto, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigated fundamental characteristics of a hybrid integrated photoreceiver module with a 1.5 μm-band quantum dot semiconductor optical amplifier (QD-SOA) and conventional pin-photodiode (pin-PD) as a first stage. The results indicated the photoreceiver integrated with a QD-SOA and QD-PD has the potential to be operated for signals over 100 Gb/s.

Original language	English
Title of host publication	2016 International Semiconductor Laser Conference, ISLC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784885523069
Publication status	Published - 2016 Dec 2
Event	2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan Duration: 2016 Sept 12 → 2016 Sept 15

Other

Other	2016 International Semiconductor Laser Conference, ISLC 2016
Country/Territory	Japan
City	Kobe
Period	16/9/12 → 16/9/15

Keywords

Photodiode
Photoreceiver
Quantum dot
Semiconductor optical amplifier

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Cite this

Matsumoto, A, Umezawa, T, Akahane, K, Kanno, A, Yamamoto, N & Kawanishi, T 2016, 90 Gb/s hybrid integrated photoreceiver module with high speed 1.5 μm-band QD-SOA. in 2016 International Semiconductor Laser Conference, ISLC 2016., 7765781, Institute of Electrical and Electronics Engineers Inc., 2016 International Semiconductor Laser Conference, ISLC 2016, Kobe, Japan, 16/9/12.

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abstract = "We investigated fundamental characteristics of a hybrid integrated photoreceiver module with a 1.5 μm-band quantum dot semiconductor optical amplifier (QD-SOA) and conventional pin-photodiode (pin-PD) as a first stage. The results indicated the photoreceiver integrated with a QD-SOA and QD-PD has the potential to be operated for signals over 100 Gb/s.",

keywords = "Photodiode, Photoreceiver, Quantum dot, Semiconductor optical amplifier",

author = "A. Matsumoto and T. Umezawa and K. Akahane and A. Kanno and N. Yamamoto and Tetsuya Kawanishi",

year = "2016",

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AU - Matsumoto, A.

AU - Umezawa, T.

AU - Akahane, K.

AU - Kanno, A.

AU - Yamamoto, N.

AU - Kawanishi, Tetsuya

PY - 2016/12/2

Y1 - 2016/12/2

N2 - We investigated fundamental characteristics of a hybrid integrated photoreceiver module with a 1.5 μm-band quantum dot semiconductor optical amplifier (QD-SOA) and conventional pin-photodiode (pin-PD) as a first stage. The results indicated the photoreceiver integrated with a QD-SOA and QD-PD has the potential to be operated for signals over 100 Gb/s.

AB - We investigated fundamental characteristics of a hybrid integrated photoreceiver module with a 1.5 μm-band quantum dot semiconductor optical amplifier (QD-SOA) and conventional pin-photodiode (pin-PD) as a first stage. The results indicated the photoreceiver integrated with a QD-SOA and QD-PD has the potential to be operated for signals over 100 Gb/s.

KW - Photodiode

KW - Photoreceiver

KW - Quantum dot

KW - Semiconductor optical amplifier

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M3 - Conference contribution

AN - SCOPUS:85014265135

BT - 2016 International Semiconductor Laser Conference, ISLC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 International Semiconductor Laser Conference, ISLC 2016

Y2 - 12 September 2016 through 15 September 2016

ER -

90 Gb/s hybrid integrated photoreceiver module with high speed 1.5 μm-band QD-SOA

Abstract

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Keywords

ASJC Scopus subject areas

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