90 Gb/s hybrid integrated photoreceiver module with high speed 1.5 μm-band QD-SOA

A. Matsumoto, T. Umezawa, K. Akahane, A. Kanno, N. Yamamoto, Tetsuya Kawanishi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We investigated fundamental characteristics of a hybrid integrated photoreceiver module with a 1.5 μm-band quantum dot semiconductor optical amplifier (QD-SOA) and conventional pin-photodiode (pin-PD) as a first stage. The results indicated the photoreceiver integrated with a QD-SOA and QD-PD has the potential to be operated for signals over 100 Gb/s.

    Original languageEnglish
    Title of host publication2016 International Semiconductor Laser Conference, ISLC 2016
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9784885523069
    Publication statusPublished - 2016 Dec 2
    Event2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan
    Duration: 2016 Sep 122016 Sep 15

    Other

    Other2016 International Semiconductor Laser Conference, ISLC 2016
    CountryJapan
    CityKobe
    Period16/9/1216/9/15

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    Keywords

    • Photodiode
    • Photoreceiver
    • Quantum dot
    • Semiconductor optical amplifier

    ASJC Scopus subject areas

    • Atomic and Molecular Physics, and Optics
    • Electrical and Electronic Engineering

    Cite this

    Matsumoto, A., Umezawa, T., Akahane, K., Kanno, A., Yamamoto, N., & Kawanishi, T. (2016). 90 Gb/s hybrid integrated photoreceiver module with high speed 1.5 μm-band QD-SOA. In 2016 International Semiconductor Laser Conference, ISLC 2016 [7765781] Institute of Electrical and Electronics Engineers Inc..