A 0.03mm2 highly balanced balun IC for millimeter-wave applications in 180-nm CMOS

Zheng Sun, Xiao Xu, Xin Yang, Takayuki Shibata, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A miniaturized broadband balun IC in 180-nm CMOS is presented for millimeter-wave applications. The balun IC is designed so that high impedance ratio between the even and odd modes is achieved by utilizing Electro-magnetic solver suitable for planer structure. The fabricated balun IC in 180-nm CMOS process occupies only 0.03 mm2. The balun IC exhibits an amplitude imbalance of less than 0.9 dB and a phase imbalance of less than 2.5 degrees in a frequency range from 20 GHz to 66 GHz.

Original languageEnglish
Title of host publicationRFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479955039
DOIs
Publication statusPublished - 2014 Oct 21
Event2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014 - Hefei
Duration: 2014 Aug 272014 Aug 30

Other

Other2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014
CityHefei
Period14/8/2714/8/30

Fingerprint

Millimeter waves

Keywords

  • 180-nm CMOS
  • Marchand balun
  • Millimeter-wave applications

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

Sun, Z., Xu, X., Yang, X., Shibata, T., & Yoshimasu, T. (2014). A 0.03mm2 highly balanced balun IC for millimeter-wave applications in 180-nm CMOS. In RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz [6933244] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2014.6933244

A 0.03mm2 highly balanced balun IC for millimeter-wave applications in 180-nm CMOS. / Sun, Zheng; Xu, Xiao; Yang, Xin; Shibata, Takayuki; Yoshimasu, Toshihiko.

RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz. Institute of Electrical and Electronics Engineers Inc., 2014. 6933244.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sun, Z, Xu, X, Yang, X, Shibata, T & Yoshimasu, T 2014, A 0.03mm2 highly balanced balun IC for millimeter-wave applications in 180-nm CMOS. in RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz., 6933244, Institute of Electrical and Electronics Engineers Inc., 2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014, Hefei, 14/8/27. https://doi.org/10.1109/RFIT.2014.6933244
Sun Z, Xu X, Yang X, Shibata T, Yoshimasu T. A 0.03mm2 highly balanced balun IC for millimeter-wave applications in 180-nm CMOS. In RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz. Institute of Electrical and Electronics Engineers Inc. 2014. 6933244 https://doi.org/10.1109/RFIT.2014.6933244
Sun, Zheng ; Xu, Xiao ; Yang, Xin ; Shibata, Takayuki ; Yoshimasu, Toshihiko. / A 0.03mm2 highly balanced balun IC for millimeter-wave applications in 180-nm CMOS. RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz. Institute of Electrical and Electronics Engineers Inc., 2014.
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