A 0.03mm2 highly balanced balun IC for millimeter-wave applications in 180-nm CMOS

Zheng Sun, Xiao Xu, Xin Yang, Takayuki Shibata, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A miniaturized broadband balun IC in 180-nm CMOS is presented for millimeter-wave applications. The balun IC is designed so that high impedance ratio between the even and odd modes is achieved by utilizing Electro-magnetic solver suitable for planer structure. The fabricated balun IC in 180-nm CMOS process occupies only 0.03 mm2. The balun IC exhibits an amplitude imbalance of less than 0.9 dB and a phase imbalance of less than 2.5 degrees in a frequency range from 20 GHz to 66 GHz.

Original languageEnglish
Title of host publicationRFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology
Subtitle of host publicationSilicon Technology Heats Up for THz
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479955039
DOIs
Publication statusPublished - 2014 Oct 21
Event2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014 - Hefei, China
Duration: 2014 Aug 272014 Aug 30

Publication series

NameRFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz

Conference

Conference2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014
CountryChina
CityHefei
Period14/8/2714/8/30

Keywords

  • 180-nm CMOS
  • Marchand balun
  • Millimeter-wave applications

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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    Sun, Z., Xu, X., Yang, X., Shibata, T., & Yoshimasu, T. (2014). A 0.03mm2 highly balanced balun IC for millimeter-wave applications in 180-nm CMOS. In RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz [6933244] (RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2014.6933244