A 0.03mm2 highly balanced balun IC for millimeter-wave applications in 180-nm CMOS

Zheng Sun; Xiao Xu; Xin Yang; Takayuki Shibata; Toshihiko Yoshimasu

doi:10.1109/RFIT.2014.6933244

A 0.03mm² highly balanced balun IC for millimeter-wave applications in 180-nm CMOS

Zheng Sun^*, Xiao Xu, Xin Yang, Takayuki Shibata, Toshihiko Yoshimasu

^*Corresponding author for this work

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A miniaturized broadband balun IC in 180-nm CMOS is presented for millimeter-wave applications. The balun IC is designed so that high impedance ratio between the even and odd modes is achieved by utilizing Electro-magnetic solver suitable for planer structure. The fabricated balun IC in 180-nm CMOS process occupies only 0.03 mm². The balun IC exhibits an amplitude imbalance of less than 0.9 dB and a phase imbalance of less than 2.5 degrees in a frequency range from 20 GHz to 66 GHz.

Original language	English
Title of host publication	RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology
Subtitle of host publication	Silicon Technology Heats Up for THz
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479955039
DOIs	https://doi.org/10.1109/RFIT.2014.6933244
Publication status	Published - 2014 Oct 21
Event	2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014 - Hefei, China Duration: 2014 Aug 27 → 2014 Aug 30

Publication series

Name	RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz

Conference

Conference	2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014
Country/Territory	China
City	Hefei
Period	14/8/27 → 14/8/30

Keywords

180-nm CMOS
Marchand balun
Millimeter-wave applications

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering

Access to Document

10.1109/RFIT.2014.6933244

Cite this

Sun, Z., Xu, X., Yang, X., Shibata, T., & Yoshimasu, T. (2014). A 0.03mm² highly balanced balun IC for millimeter-wave applications in 180-nm CMOS. In RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz [6933244] (RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2014.6933244

A 0.03mm² highly balanced balun IC for millimeter-wave applications in 180-nm CMOS. / Sun, Zheng; Xu, Xiao; Yang, Xin et al.

RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz. Institute of Electrical and Electronics Engineers Inc., 2014. 6933244 (RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sun, Z, Xu, X, Yang, X, Shibata, T & Yoshimasu, T 2014, A 0.03mm² highly balanced balun IC for millimeter-wave applications in 180-nm CMOS. in RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz., 6933244, RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz, Institute of Electrical and Electronics Engineers Inc., 2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014, Hefei, China, 14/8/27. https://doi.org/10.1109/RFIT.2014.6933244

Sun Z, Xu X, Yang X, Shibata T, Yoshimasu T. A 0.03mm² highly balanced balun IC for millimeter-wave applications in 180-nm CMOS. In RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz. Institute of Electrical and Electronics Engineers Inc. 2014. 6933244. (RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz). doi: 10.1109/RFIT.2014.6933244

Sun, Zheng ; Xu, Xiao ; Yang, Xin et al. / A 0.03mm² highly balanced balun IC for millimeter-wave applications in 180-nm CMOS. RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz. Institute of Electrical and Electronics Engineers Inc., 2014. (RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz).

@inproceedings{40f12a818f16452082fd516fbd78ab89,

title = "A 0.03mm2 highly balanced balun IC for millimeter-wave applications in 180-nm CMOS",

abstract = "A miniaturized broadband balun IC in 180-nm CMOS is presented for millimeter-wave applications. The balun IC is designed so that high impedance ratio between the even and odd modes is achieved by utilizing Electro-magnetic solver suitable for planer structure. The fabricated balun IC in 180-nm CMOS process occupies only 0.03 mm2. The balun IC exhibits an amplitude imbalance of less than 0.9 dB and a phase imbalance of less than 2.5 degrees in a frequency range from 20 GHz to 66 GHz.",

keywords = "180-nm CMOS, Marchand balun, Millimeter-wave applications",

author = "Zheng Sun and Xiao Xu and Xin Yang and Takayuki Shibata and Toshihiko Yoshimasu",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014 ; Conference date: 27-08-2014 Through 30-08-2014",

year = "2014",

month = oct,

day = "21",

doi = "10.1109/RFIT.2014.6933244",

language = "English",

series = "RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology",

}

TY - GEN

T1 - A 0.03mm2 highly balanced balun IC for millimeter-wave applications in 180-nm CMOS

AU - Sun, Zheng

AU - Xu, Xiao

AU - Yang, Xin

AU - Shibata, Takayuki

AU - Yoshimasu, Toshihiko

PY - 2014/10/21

Y1 - 2014/10/21

N2 - A miniaturized broadband balun IC in 180-nm CMOS is presented for millimeter-wave applications. The balun IC is designed so that high impedance ratio between the even and odd modes is achieved by utilizing Electro-magnetic solver suitable for planer structure. The fabricated balun IC in 180-nm CMOS process occupies only 0.03 mm2. The balun IC exhibits an amplitude imbalance of less than 0.9 dB and a phase imbalance of less than 2.5 degrees in a frequency range from 20 GHz to 66 GHz.

AB - A miniaturized broadband balun IC in 180-nm CMOS is presented for millimeter-wave applications. The balun IC is designed so that high impedance ratio between the even and odd modes is achieved by utilizing Electro-magnetic solver suitable for planer structure. The fabricated balun IC in 180-nm CMOS process occupies only 0.03 mm2. The balun IC exhibits an amplitude imbalance of less than 0.9 dB and a phase imbalance of less than 2.5 degrees in a frequency range from 20 GHz to 66 GHz.

KW - 180-nm CMOS

KW - Marchand balun

KW - Millimeter-wave applications

UR - http://www.scopus.com/inward/record.url?scp=84912023299&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84912023299&partnerID=8YFLogxK

U2 - 10.1109/RFIT.2014.6933244

DO - 10.1109/RFIT.2014.6933244

M3 - Conference contribution

AN - SCOPUS:84912023299

T3 - RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz

BT - RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014

Y2 - 27 August 2014 through 30 August 2014

ER -