A 0.5-V 2.07-fJ/b 497-F2 EE/CMOS Hybrid SRAM Physically Unclonable Function with < 1E-7 Bit Error Rate Achieved through Hot Carrier Injection Burn-in

Kunyang Liu, Hongliang Pu, Hirofumi Shinohara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a bit-error free SRAM-based physically unclonable function (PUF) in 130-nm standard CMOS. The PUF has a compact bitcell, with a bitcell area of 497 F2. It switches from EE SRAM to CMOS SRAM mode during evaluation, achieving high native stability, low-voltage evaluation, and low-power operation. Its stability is reinforced to 100% through hot carrier injection (HCI) burn-in on the alternate-direction nMOS load, which causes no visible oxide damage and does not require additional fabrication processes or extra transistors in the bitcell. Experimental results show that the prototype chips achieved actual zero bit error across 0.5-0.7 V and -40°C to 120 °C, as well as zero error (<1E-7 BER) at the worst VT corner after accelerated aging test equivalent to 21 years of operation. The PUF functions stably down to 0.5 V, with an energy of 2.07 fJ/b, which includes both the evaluation and read-out power. The secure, compact, low-power and 100% stable features of the PUF make it an excellent candidate for the resource-constrained Internet of Things security.

Original languageEnglish
Title of host publication2020 IEEE Custom Integrated Circuits Conference, CICC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728160313
DOIs
Publication statusPublished - 2020 Mar
Event2020 IEEE Custom Integrated Circuits Conference, CICC 2020 - Boston, United States
Duration: 2020 Mar 222020 Mar 25

Publication series

NameProceedings of the Custom Integrated Circuits Conference
Volume2020-March
ISSN (Print)0886-5930

Conference

Conference2020 IEEE Custom Integrated Circuits Conference, CICC 2020
CountryUnited States
CityBoston
Period20/3/2220/3/25

Keywords

  • hardware security
  • hot carrier injection (HCI)
  • key generation
  • physically unclonable function (PUF)
  • SRAM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Liu, K., Pu, H., & Shinohara, H. (2020). A 0.5-V 2.07-fJ/b 497-F2 EE/CMOS Hybrid SRAM Physically Unclonable Function with < 1E-7 Bit Error Rate Achieved through Hot Carrier Injection Burn-in. In 2020 IEEE Custom Integrated Circuits Conference, CICC 2020 [9075875] (Proceedings of the Custom Integrated Circuits Conference; Vol. 2020-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CICC48029.2020.9075875