A 1 Mb nonvolatile embedded memory using 4T2MTJ cell with 32 b fine-grained power gating scheme

Takashi Ohsawa, Hiroki Koike, Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

Research output: Contribution to journalArticlepeer-review

62 Citations (Scopus)

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Engineering & Materials Science