A 125 mm2 1 Gb NAND flash memory with 10 MB/s program throughput

Hiroshi Nakamura; Kenichi Imamiya; Toshihiko Himeno; Toshio Yamamura; Tamio Ikehashi; Ken Takeuchi; Kazushige Kanda; Koji Hosono; Takuya Futatsuyama; Koichi Kawai; Riichiro Shirota; Norihisa Arai; Fumitaka Arai; Kazuo Hatakeyama; Hiroaki Hazama; Masanobu Saito; Hisataka Meguro; Kevin Conley; Khandker Quader; Jian Chen

A 125 mm² 1 Gb NAND flash memory with 10 MB/s program throughput

Hiroshi Nakamura^*, Kenichi Imamiya, Toshihiko Himeno, Toshio Yamamura, Tamio Ikehashi, Ken Takeuchi, Kazushige Kanda, Koji Hosono, Takuya Futatsuyama, Koichi Kawai, Riichiro Shirota, Norihisa Arai, Fumitaka Arai, Kazuo Hatakeyama, Hiroaki Hazama, Masanobu Saito, Hisataka Meguro, Kevin Conley, Khandker Quader, Jian Chen

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

A 125 mm² 1 Gb NAND flash memory with 10 MB/s program throughput was presented. The 1 Gb flash has the highest memory density among 2LC memories and the highest cell/chip efficiency among flash memories. Two techniques were adopted in the architecture for reducing the chip size, the number of memory cells in a NAND string was changed to 32 and each word line (WL) crossed (1024+32)×16 bit lines.

Original language	English
Pages (from-to)	106-107+450+99
Journal	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Publication status	Published - 2002
Externally published	Yes
Event	2002 IEEE International Solid-State Circuits Conference - San Francisco, CA, United States Duration: 2002 Feb 3 → 2002 Feb 7

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Nakamura, H., Imamiya, K., Himeno, T., Yamamura, T., Ikehashi, T., Takeuchi, K., Kanda, K., Hosono, K., Futatsuyama, T., Kawai, K., Shirota, R., Arai, N., Arai, F., Hatakeyama, K., Hazama, H., Saito, M., Meguro, H., Conley, K., Quader, K., & Chen, J. (2002). A 125 mm² 1 Gb NAND flash memory with 10 MB/s program throughput. Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 106-107+450+99.

Nakamura, H, Imamiya, K, Himeno, T, Yamamura, T, Ikehashi, T, Takeuchi, K, Kanda, K, Hosono, K, Futatsuyama, T, Kawai, K, Shirota, R, Arai, N, Arai, F, Hatakeyama, K, Hazama, H, Saito, M, Meguro, H, Conley, K, Quader, K & Chen, J 2002, 'A 125 mm² 1 Gb NAND flash memory with 10 MB/s program throughput', Digest of Technical Papers - IEEE International Solid-State Circuits Conference, pp. 106-107+450+99.

@article{1633941f5648481895dd0b12dd9b256e,

title = "A 125 mm2 1 Gb NAND flash memory with 10 MB/s program throughput",

abstract = "A 125 mm2 1 Gb NAND flash memory with 10 MB/s program throughput was presented. The 1 Gb flash has the highest memory density among 2LC memories and the highest cell/chip efficiency among flash memories. Two techniques were adopted in the architecture for reducing the chip size, the number of memory cells in a NAND string was changed to 32 and each word line (WL) crossed (1024+32)×16 bit lines.",

author = "Hiroshi Nakamura and Kenichi Imamiya and Toshihiko Himeno and Toshio Yamamura and Tamio Ikehashi and Ken Takeuchi and Kazushige Kanda and Koji Hosono and Takuya Futatsuyama and Koichi Kawai and Riichiro Shirota and Norihisa Arai and Fumitaka Arai and Kazuo Hatakeyama and Hiroaki Hazama and Masanobu Saito and Hisataka Meguro and Kevin Conley and Khandker Quader and Jian Chen",

year = "2002",

language = "English",

pages = "106--107+450+99",

journal = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

issn = "0193-6530",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE International Solid-State Circuits Conference ; Conference date: 03-02-2002 Through 07-02-2002",

}

TY - JOUR

T1 - A 125 mm2 1 Gb NAND flash memory with 10 MB/s program throughput

AU - Nakamura, Hiroshi

AU - Imamiya, Kenichi

AU - Himeno, Toshihiko

AU - Yamamura, Toshio

AU - Ikehashi, Tamio

AU - Takeuchi, Ken

AU - Kanda, Kazushige

AU - Hosono, Koji

AU - Futatsuyama, Takuya

AU - Kawai, Koichi

AU - Shirota, Riichiro

AU - Arai, Norihisa

AU - Arai, Fumitaka

AU - Hatakeyama, Kazuo

AU - Hazama, Hiroaki

AU - Saito, Masanobu

AU - Meguro, Hisataka

AU - Conley, Kevin

AU - Quader, Khandker

AU - Chen, Jian

PY - 2002

Y1 - 2002

N2 - A 125 mm2 1 Gb NAND flash memory with 10 MB/s program throughput was presented. The 1 Gb flash has the highest memory density among 2LC memories and the highest cell/chip efficiency among flash memories. Two techniques were adopted in the architecture for reducing the chip size, the number of memory cells in a NAND string was changed to 32 and each word line (WL) crossed (1024+32)×16 bit lines.

AB - A 125 mm2 1 Gb NAND flash memory with 10 MB/s program throughput was presented. The 1 Gb flash has the highest memory density among 2LC memories and the highest cell/chip efficiency among flash memories. Two techniques were adopted in the architecture for reducing the chip size, the number of memory cells in a NAND string was changed to 32 and each word line (WL) crossed (1024+32)×16 bit lines.

UR - http://www.scopus.com/inward/record.url?scp=0036107954&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036107954&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036107954

SN - 0193-6530

SP - 106-107+450+99

JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

T2 - 2002 IEEE International Solid-State Circuits Conference

Y2 - 3 February 2002 through 7 February 2002

ER -

A 125 mm² 1 Gb NAND flash memory with 10 MB/s program throughput

Abstract

ASJC Scopus subject areas

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