Abstract
A high efficiency linear power amplifier (PA) IC is presented for 14 GHz-band wireless communication systems. A novel adaptive bias circuit with four-stacked MOSFET structure is proposed to enhance both the linearity and efficiency of the PA IC over the wide input power range. The PA IC is designed, fabricated and fully tested in 56-nm SOI CMOS. In linear mode, the PA IC has exhibited an output P1dB of 20.1 dBm at 14 GHz and a supply voltage of 4.0 V. The measured PAE at P1dB is as high as 40.1%. Moreover, the peak PAE of 41.6% is achieved in efficient mode.
| Original language | English |
|---|---|
| Title of host publication | EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 182-185 |
| Number of pages | 4 |
| ISBN (Electronic) | 9782874870521 |
| DOIs | |
| Publication status | Published - 2018 Nov 16 |
| Event | 13th European Microwave Integrated Circuits Conference, EuMIC 2018 - Madrid, Spain Duration: 2018 Sep 24 → 2018 Sep 25 |
Other
| Other | 13th European Microwave Integrated Circuits Conference, EuMIC 2018 |
|---|---|
| Country | Spain |
| City | Madrid |
| Period | 18/9/24 → 18/9/25 |
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Keywords
- adaptive bias circuit
- high efficiency
- high linearity
- SOI CMOS
ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Instrumentation
Cite this
A 14-GHz-Band Highly Linear Stacked FET Power Amplifier IC with 20.1 dBm P1dB and 40.1% PAE in 56-nm SOI CMOS. / Chen, Cuilin; Sugiura, Tsuyoshi; Yoshimasu, Toshihiko.
EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2018. p. 182-185 8539942.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - A 14-GHz-Band Highly Linear Stacked FET Power Amplifier IC with 20.1 dBm P1dB and 40.1% PAE in 56-nm SOI CMOS
AU - Chen, Cuilin
AU - Sugiura, Tsuyoshi
AU - Yoshimasu, Toshihiko
PY - 2018/11/16
Y1 - 2018/11/16
N2 - A high efficiency linear power amplifier (PA) IC is presented for 14 GHz-band wireless communication systems. A novel adaptive bias circuit with four-stacked MOSFET structure is proposed to enhance both the linearity and efficiency of the PA IC over the wide input power range. The PA IC is designed, fabricated and fully tested in 56-nm SOI CMOS. In linear mode, the PA IC has exhibited an output P1dB of 20.1 dBm at 14 GHz and a supply voltage of 4.0 V. The measured PAE at P1dB is as high as 40.1%. Moreover, the peak PAE of 41.6% is achieved in efficient mode.
AB - A high efficiency linear power amplifier (PA) IC is presented for 14 GHz-band wireless communication systems. A novel adaptive bias circuit with four-stacked MOSFET structure is proposed to enhance both the linearity and efficiency of the PA IC over the wide input power range. The PA IC is designed, fabricated and fully tested in 56-nm SOI CMOS. In linear mode, the PA IC has exhibited an output P1dB of 20.1 dBm at 14 GHz and a supply voltage of 4.0 V. The measured PAE at P1dB is as high as 40.1%. Moreover, the peak PAE of 41.6% is achieved in efficient mode.
KW - adaptive bias circuit
KW - high efficiency
KW - high linearity
KW - SOI CMOS
UR - http://www.scopus.com/inward/record.url?scp=85059740274&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85059740274&partnerID=8YFLogxK
U2 - 10.23919/EuMIC.2018.8539942
DO - 10.23919/EuMIC.2018.8539942
M3 - Conference contribution
SP - 182
EP - 185
BT - EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference
PB - Institute of Electrical and Electronics Engineers Inc.
ER -