A 1.55-μm waveband optical absorption characterization of an electro-absorption device with a highly stacked InAs/InGaAlAs quantum dot structure

Naokatsu Yamamoto; Kouichi Akahane; Toshimasa Umezawa; Tetsuya Kawanishi

doi:10.1587/transele.E98.C.878

A 1.55-μm waveband optical absorption characterization of an electro-absorption device with a highly stacked InAs/InGaAlAs quantum dot structure

Naokatsu Yamamoto, Kouichi Akahane, Toshimasa Umezawa, Tetsuya Kawanishi

Research output: Contribution to journal › Article › peer-review

Abstract

A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.

Original language	English
Pages (from-to)	878-881
Number of pages	4
Journal	IEICE Transactions on Electronics
Volume	E98C
Issue number	8
DOIs	https://doi.org/10.1587/transele.E98.C.878
Publication status	Published - 2015 Aug 1
Externally published	Yes

Keywords

Electro-absorption
Optical modulator
Quantum confined stark effect
Quantum dot
Waveguide device

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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A 1.55-μm waveband optical absorption characterization of an electro-absorption device with a highly stacked InAs/InGaAlAs quantum dot structure. / Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya.

In: IEICE Transactions on Electronics, Vol. E98C, No. 8, 01.08.2015, p. 878-881.

Research output: Contribution to journal › Article › peer-review

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