A 1.55-μm waveband optical absorption characterization of an electro-absorption device with a highly stacked InAs/InGaAlAs quantum dot structure

Naokatsu Yamamoto, Kouichi Akahane, Toshimasa Umezawa, Tetsuya Kawanishi

Research output: Contribution to journalArticle


A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.

Original languageEnglish
Pages (from-to)878-881
Number of pages4
JournalIEICE Transactions on Electronics
Issue number8
Publication statusPublished - 2015 Aug 1
Externally publishedYes



  • Electro-absorption
  • Optical modulator
  • Quantum confined stark effect
  • Quantum dot
  • Waveguide device

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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