A 1.55-μm waveband optical absorption characterization of an electro-absorption device with a highly stacked InAs/InGaAlAs quantum dot structure

Naokatsu Yamamoto; Kouichi Akahane; Toshimasa Umezawa; Tetsuya Kawanishi

doi:10.1587/transele.E98.C.878

A 1.55-μm waveband optical absorption characterization of an electro-absorption device with a highly stacked InAs/InGaAlAs quantum dot structure

Naokatsu Yamamoto, Kouichi Akahane, Toshimasa Umezawa, Tetsuya Kawanishi

Research output: Contribution to journal › Article › peer-review

Abstract

A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.

Original language	English
Pages (from-to)	878-881
Number of pages	4
Journal	IEICE Transactions on Electronics
Volume	E98C
Issue number	8
DOIs	https://doi.org/10.1587/transele.E98.C.878
Publication status	Published - 2015 Aug 1
Externally published	Yes

Keywords

Electro-absorption
Optical modulator
Quantum confined stark effect
Quantum dot
Waveguide device

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1587/transele.E98.C.878

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abstract = "A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.",

keywords = "Electro-absorption, Optical modulator, Quantum confined stark effect, Quantum dot, Waveguide device",

author = "Naokatsu Yamamoto and Kouichi Akahane and Toshimasa Umezawa and Tetsuya Kawanishi",

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doi = "10.1587/transele.E98.C.878",

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AU - Akahane, Kouichi

AU - Umezawa, Toshimasa

AU - Kawanishi, Tetsuya

PY - 2015/8/1

Y1 - 2015/8/1

N2 - A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.

AB - A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.

KW - Electro-absorption

KW - Optical modulator

KW - Quantum confined stark effect

KW - Quantum dot

KW - Waveguide device

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A 1.55-μm waveband optical absorption characterization of an electro-absorption device with a highly stacked InAs/InGaAlAs quantum dot structure

Abstract

Keywords

ASJC Scopus subject areas

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