A 1.55-μm waveband optical absorption characterization of an electro-absorption device with a highly stacked InAs/InGaAlAs quantum dot structure

Naokatsu Yamamoto, Kouichi Akahane, Toshimasa Umezawa, Tetsuya Kawanishi

Research output: Contribution to journalArticle

Abstract

A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.

Original languageEnglish
Pages (from-to)878-881
Number of pages4
JournalIEICE Transactions on Electronics
VolumeE98C
Issue number8
DOIs
Publication statusPublished - 2015 Aug 1
Externally publishedYes

Fingerprint

Light absorption
Semiconductor quantum dots
Stark effect
Electric fields
indium arsenide

Keywords

  • Electro-absorption
  • Optical modulator
  • Quantum confined stark effect
  • Quantum dot
  • Waveguide device

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

A 1.55-μm waveband optical absorption characterization of an electro-absorption device with a highly stacked InAs/InGaAlAs quantum dot structure. / Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya.

In: IEICE Transactions on Electronics, Vol. E98C, No. 8, 01.08.2015, p. 878-881.

Research output: Contribution to journalArticle

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