A 1.55-μm waveband optical absorption characterization of an electro-absorption device with a highly stacked InAs/InGaAlAs quantum dot structure

Naokatsu Yamamoto; Kouichi Akahane; Toshimasa Umezawa; Tetsuya Kawanishi

doi:10.1587/transele.E98.C.878

A 1.55-μm waveband optical absorption characterization of an electro-absorption device with a highly stacked InAs/InGaAlAs quantum dot structure

Naokatsu Yamamoto, Kouichi Akahane, Toshimasa Umezawa, Tetsuya Kawanishi

Research output: Contribution to journal › Article

Abstract

A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.

Original language	English
Pages (from-to)	878-881
Number of pages	4
Journal	IEICE Transactions on Electronics
Volume	E98C
Issue number	8
DOIs	https://doi.org/10.1587/transele.E98.C.878
Publication status	Published - 2015 Aug 1
Externally published	Yes

Fingerprint

Keywords

Electro-absorption
Optical modulator
Quantum confined stark effect
Quantum dot
Waveguide device

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

Yamamoto, N., Akahane, K., Umezawa, T., & Kawanishi, T. (2015). A 1.55-μm waveband optical absorption characterization of an electro-absorption device with a highly stacked InAs/InGaAlAs quantum dot structure. IEICE Transactions on Electronics, E98C(8), 878-881. https://doi.org/10.1587/transele.E98.C.878

@article{180af57b751d43b191bb008682487d8e,

title = "A 1.55-μm waveband optical absorption characterization of an electro-absorption device with a highly stacked InAs/InGaAlAs quantum dot structure",

abstract = "A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.",

keywords = "Electro-absorption, Optical modulator, Quantum confined stark effect, Quantum dot, Waveguide device",

author = "Naokatsu Yamamoto and Kouichi Akahane and Toshimasa Umezawa and Tetsuya Kawanishi",

year = "2015",

month = aug,

day = "1",

doi = "10.1587/transele.E98.C.878",

language = "English",

volume = "E98C",

pages = "878--881",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",

number = "8",

}

TY - JOUR

T1 - A 1.55-μm waveband optical absorption characterization of an electro-absorption device with a highly stacked InAs/InGaAlAs quantum dot structure

AU - Yamamoto, Naokatsu

AU - Akahane, Kouichi

AU - Umezawa, Toshimasa

AU - Kawanishi, Tetsuya

PY - 2015/8/1

Y1 - 2015/8/1

N2 - A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.

AB - A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.

KW - Electro-absorption

KW - Optical modulator

KW - Quantum confined stark effect

KW - Quantum dot

KW - Waveguide device

UR - http://www.scopus.com/inward/record.url?scp=84938582886&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84938582886&partnerID=8YFLogxK

U2 - 10.1587/transele.E98.C.878

DO - 10.1587/transele.E98.C.878

M3 - Article

AN - SCOPUS:84938582886

VL - E98C

SP - 878

EP - 881

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

SN - 0916-8524

IS - 8

ER -

Access to Document

10.1587/transele.E98.C.878