Abstract
A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.
| Original language | English |
|---|---|
| Pages (from-to) | 878-881 |
| Number of pages | 4 |
| Journal | IEICE Transactions on Electronics |
| Volume | E98C |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2015 Aug 1 |
| Externally published | Yes |
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Keywords
- Electro-absorption
- Optical modulator
- Quantum confined stark effect
- Quantum dot
- Waveguide device
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
A 1.55-μm waveband optical absorption characterization of an electro-absorption device with a highly stacked InAs/InGaAlAs quantum dot structure. / Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya.
In: IEICE Transactions on Electronics, Vol. E98C, No. 8, 01.08.2015, p. 878-881.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A 1.55-μm waveband optical absorption characterization of an electro-absorption device with a highly stacked InAs/InGaAlAs quantum dot structure
AU - Yamamoto, Naokatsu
AU - Akahane, Kouichi
AU - Umezawa, Toshimasa
AU - Kawanishi, Tetsuya
PY - 2015/8/1
Y1 - 2015/8/1
N2 - A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.
AB - A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.
KW - Electro-absorption
KW - Optical modulator
KW - Quantum confined stark effect
KW - Quantum dot
KW - Waveguide device
UR - http://www.scopus.com/inward/record.url?scp=84938582886&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84938582886&partnerID=8YFLogxK
U2 - 10.1587/transele.E98.C.878
DO - 10.1587/transele.E98.C.878
M3 - Article
AN - SCOPUS:84938582886
VL - E98C
SP - 878
EP - 881
JO - IEICE Transactions on Electronics
JF - IEICE Transactions on Electronics
SN - 0916-8524
IS - 8
ER -