Abstract
A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.
| Original language | English |
|---|---|
| Pages (from-to) | 878-881 |
| Number of pages | 4 |
| Journal | IEICE Transactions on Electronics |
| Volume | E98C |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2015 Aug 1 |
| Externally published | Yes |
Keywords
- Electro-absorption
- Optical modulator
- Quantum confined stark effect
- Quantum dot
- Waveguide device
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
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Cite this
Yamamoto, N., Akahane, K., Umezawa, T., & Kawanishi, T. (2015). A 1.55-μm waveband optical absorption characterization of an electro-absorption device with a highly stacked InAs/InGaAlAs quantum dot structure. IEICE Transactions on Electronics, E98C(8), 878-881. https://doi.org/10.1587/transele.E98.C.878