Abstract
A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.
Original language | English |
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Pages (from-to) | 878-881 |
Number of pages | 4 |
Journal | IEICE Transactions on Electronics |
Volume | E98C |
Issue number | 8 |
DOIs | |
Publication status | Published - 2015 Aug 1 |
Externally published | Yes |
Keywords
- Electro-absorption
- Optical modulator
- Quantum confined stark effect
- Quantum dot
- Waveguide device
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials