A 1.55-μm waveband optical absorption characterization of highly-stacked InAs/InGaAlAs quantum dot structure for electro-absorption devices

N. Yamamoto, K. Akahane, T. Umezawa, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have successfully developed a quantum dot (QD) electro-absorption device with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 9.0-V reverse bias voltage are clearly observed in the developed QD device.

Original languageEnglish
Title of host publication2014 International Topical Meeting on Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, MWP/APMP 2014 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages93-96
Number of pages4
ISBN (Print)9784885522901
DOIs
Publication statusPublished - 2014 Dec 19
Externally publishedYes
Event2014 International Topical Meeting on Microwave Photonics, MWP 2014 and the 9th Asia-Pacific Microwave Photonics Conference, APMP 2014 - Sapporo, Japan
Duration: 2014 Oct 202014 Oct 23

Other

Other2014 International Topical Meeting on Microwave Photonics, MWP 2014 and the 9th Asia-Pacific Microwave Photonics Conference, APMP 2014
CountryJapan
CitySapporo
Period14/10/2014/10/23

Fingerprint

Light absorption
Semiconductor quantum dots
Stark effect
Bias voltage
indium arsenide

Keywords

  • electro-absorption
  • optical modulator
  • quantum confined Stark effect
  • quantum dot
  • waveguide device

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Yamamoto, N., Akahane, K., Umezawa, T., & Kawanishi, T. (2014). A 1.55-μm waveband optical absorption characterization of highly-stacked InAs/InGaAlAs quantum dot structure for electro-absorption devices. In 2014 International Topical Meeting on Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, MWP/APMP 2014 - Proceedings (pp. 93-96). [6994499] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWP.2014.6994499

A 1.55-μm waveband optical absorption characterization of highly-stacked InAs/InGaAlAs quantum dot structure for electro-absorption devices. / Yamamoto, N.; Akahane, K.; Umezawa, T.; Kawanishi, Tetsuya.

2014 International Topical Meeting on Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, MWP/APMP 2014 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2014. p. 93-96 6994499.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamamoto, N, Akahane, K, Umezawa, T & Kawanishi, T 2014, A 1.55-μm waveband optical absorption characterization of highly-stacked InAs/InGaAlAs quantum dot structure for electro-absorption devices. in 2014 International Topical Meeting on Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, MWP/APMP 2014 - Proceedings., 6994499, Institute of Electrical and Electronics Engineers Inc., pp. 93-96, 2014 International Topical Meeting on Microwave Photonics, MWP 2014 and the 9th Asia-Pacific Microwave Photonics Conference, APMP 2014, Sapporo, Japan, 14/10/20. https://doi.org/10.1109/MWP.2014.6994499
Yamamoto N, Akahane K, Umezawa T, Kawanishi T. A 1.55-μm waveband optical absorption characterization of highly-stacked InAs/InGaAlAs quantum dot structure for electro-absorption devices. In 2014 International Topical Meeting on Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, MWP/APMP 2014 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2014. p. 93-96. 6994499 https://doi.org/10.1109/MWP.2014.6994499
Yamamoto, N. ; Akahane, K. ; Umezawa, T. ; Kawanishi, Tetsuya. / A 1.55-μm waveband optical absorption characterization of highly-stacked InAs/InGaAlAs quantum dot structure for electro-absorption devices. 2014 International Topical Meeting on Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, MWP/APMP 2014 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 93-96
@inproceedings{a91b5f3d4bf34ea6bd6c83fec86b6391,
title = "A 1.55-μm waveband optical absorption characterization of highly-stacked InAs/InGaAlAs quantum dot structure for electro-absorption devices",
abstract = "We have successfully developed a quantum dot (QD) electro-absorption device with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 9.0-V reverse bias voltage are clearly observed in the developed QD device.",
keywords = "electro-absorption, optical modulator, quantum confined Stark effect, quantum dot, waveguide device",
author = "N. Yamamoto and K. Akahane and T. Umezawa and Tetsuya Kawanishi",
year = "2014",
month = "12",
day = "19",
doi = "10.1109/MWP.2014.6994499",
language = "English",
isbn = "9784885522901",
pages = "93--96",
booktitle = "2014 International Topical Meeting on Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, MWP/APMP 2014 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - A 1.55-μm waveband optical absorption characterization of highly-stacked InAs/InGaAlAs quantum dot structure for electro-absorption devices

AU - Yamamoto, N.

AU - Akahane, K.

AU - Umezawa, T.

AU - Kawanishi, Tetsuya

PY - 2014/12/19

Y1 - 2014/12/19

N2 - We have successfully developed a quantum dot (QD) electro-absorption device with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 9.0-V reverse bias voltage are clearly observed in the developed QD device.

AB - We have successfully developed a quantum dot (QD) electro-absorption device with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 9.0-V reverse bias voltage are clearly observed in the developed QD device.

KW - electro-absorption

KW - optical modulator

KW - quantum confined Stark effect

KW - quantum dot

KW - waveguide device

UR - http://www.scopus.com/inward/record.url?scp=84928013590&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84928013590&partnerID=8YFLogxK

U2 - 10.1109/MWP.2014.6994499

DO - 10.1109/MWP.2014.6994499

M3 - Conference contribution

SN - 9784885522901

SP - 93

EP - 96

BT - 2014 International Topical Meeting on Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, MWP/APMP 2014 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -