A 1.55-μm waveband optical absorption characterization of highly-stacked InAs/InGaAlAs quantum dot structure for electro-absorption devices

N. Yamamoto, K. Akahane, T. Umezawa, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have successfully developed a quantum dot (QD) electro-absorption device with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 9.0-V reverse bias voltage are clearly observed in the developed QD device.

Original languageEnglish
Title of host publication2014 International Topical Meeting on Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, MWP/APMP 2014 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages93-96
Number of pages4
ISBN (Print)9784885522901
DOIs
Publication statusPublished - 2014 Dec 19
Externally publishedYes
Event2014 International Topical Meeting on Microwave Photonics, MWP 2014 and the 9th Asia-Pacific Microwave Photonics Conference, APMP 2014 - Sapporo, Japan
Duration: 2014 Oct 202014 Oct 23

Other

Other2014 International Topical Meeting on Microwave Photonics, MWP 2014 and the 9th Asia-Pacific Microwave Photonics Conference, APMP 2014
CountryJapan
CitySapporo
Period14/10/2014/10/23

Keywords

  • electro-absorption
  • optical modulator
  • quantum confined Stark effect
  • quantum dot
  • waveguide device

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'A 1.55-μm waveband optical absorption characterization of highly-stacked InAs/InGaAlAs quantum dot structure for electro-absorption devices'. Together they form a unique fingerprint.

  • Cite this

    Yamamoto, N., Akahane, K., Umezawa, T., & Kawanishi, T. (2014). A 1.55-μm waveband optical absorption characterization of highly-stacked InAs/InGaAlAs quantum dot structure for electro-absorption devices. In 2014 International Topical Meeting on Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, MWP/APMP 2014 - Proceedings (pp. 93-96). [6994499] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWP.2014.6994499