A 1.5nsec/2.1nsec random read/write cycle 1Mb STT-RAM using 6T2MTJ cell with background write for nonvolatile e-memories

T. Ohsawa, S. Miura, K. Kinoshita, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

34 Citations (Scopus)

Abstract

A 1Mb STT-RAM with a 6T2MTJ cell is designed and fabricated using 90nm CMOS/MTJ process that can operate in 1.5nsec/2.1nsec random read/write cycle by adopting a background write scheme. It works around the problem of high error rate of MTJ switching in a short period of time at moderate drive current. The RAM is fast enough to be applicable to embedded memories such as L3 cache.

Original languageEnglish
Title of host publication2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers
PagesC110-C111
Publication statusPublished - 2013 Sep 9
Externally publishedYes
Event2013 Symposium on VLSI Technology, VLSIT 2013 - Kyoto, Japan
Duration: 2013 Jun 112013 Jun 13

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2013 Symposium on VLSI Technology, VLSIT 2013
CountryJapan
CityKyoto
Period13/6/1113/6/13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Ohsawa, T., Miura, S., Kinoshita, K., Honjo, H., Ikeda, S., Hanyu, T., Ohno, H., & Endoh, T. (2013). A 1.5nsec/2.1nsec random read/write cycle 1Mb STT-RAM using 6T2MTJ cell with background write for nonvolatile e-memories. In 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers (pp. C110-C111). [6576613] (Digest of Technical Papers - Symposium on VLSI Technology).