A-197.3 dBc/Hz FoMT wideband LC-VCO IC with an I-MOS based novel varactor in 40-nm SOI CMOS

Mengchu Fang; Akihiko Kumura; Toshihiko Yoshimasu

doi:10.1109/APMC46564.2019.9038256

A-197.3 dBc/Hz FoMT wideband LC-VCO IC with an I-MOS based novel varactor in 40-nm SOI CMOS

Mengchu Fang, Akihiko Kumura, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

This paper presents a wideband excellent FoMT LC-VCO IC with a novel varactor controlled by a single tuning voltage. The novel varactor includes an Inversion-MOS (IMOS) and an MIM capacitor to widen the capacitance variation. The proposed wideband VCO IC is designed, fabricated and fully evaluated on wafer in 40-nm SOI CMOS. The proposed VCO IC has a completely continuous frequency tuning range from 4.14 GHz to 6.23 GHz (40.3 %) and a-131.0-dBc/Hz measured phase noise at 10-MHz offset frequency from the oscillation frequency of 4.14 GHz. Moreover, the VCO IC has exhibited a measured FoMT of-197.3 dBc/Hz under a 0.34-V supply voltage.

Original language	English
Title of host publication	Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	783-785
Number of pages	3
ISBN (Electronic)	9781728135175
DOIs	https://doi.org/10.1109/APMC46564.2019.9038256
Publication status	Published - 2019 Dec
Event	2019 IEEE Asia-Pacific Microwave Conference, APMC 2019 - Singapore, Singapore Duration: 2019 Dec 10 → 2019 Dec 13

Publication series

Name	Asia-Pacific Microwave Conference Proceedings, APMC
Volume	2019-December

Conference

Conference	2019 IEEE Asia-Pacific Microwave Conference, APMC 2019
Country	Singapore
City	Singapore
Period	19/12/10 → 19/12/13

Keywords

IMOS
LC-VCO
Single control voltage
Wideband

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/APMC46564.2019.9038256

Fingerprint Dive into the research topics of 'A-197.3 dBc/Hz FoMT wideband LC-VCO IC with an I-MOS based novel varactor in 40-nm SOI CMOS'. Together they form a unique fingerprint.

Cite this

Fang, M., Kumura, A., & Yoshimasu, T. (2019). A-197.3 dBc/Hz FoMT wideband LC-VCO IC with an I-MOS based novel varactor in 40-nm SOI CMOS. In Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019 (pp. 783-785). [9038256] (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APMC46564.2019.9038256

A-197.3 dBc/Hz FoMT wideband LC-VCO IC with an I-MOS based novel varactor in 40-nm SOI CMOS. / Fang, Mengchu; Kumura, Akihiko; Yoshimasu, Toshihiko.

Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 783-785 9038256 (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 2019-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fang, M, Kumura, A & Yoshimasu, T 2019, A-197.3 dBc/Hz FoMT wideband LC-VCO IC with an I-MOS based novel varactor in 40-nm SOI CMOS. in Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019., 9038256, Asia-Pacific Microwave Conference Proceedings, APMC, vol. 2019-December, Institute of Electrical and Electronics Engineers Inc., pp. 783-785, 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019, Singapore, Singapore, 19/12/10. https://doi.org/10.1109/APMC46564.2019.9038256

Fang M, Kumura A, Yoshimasu T. A-197.3 dBc/Hz FoMT wideband LC-VCO IC with an I-MOS based novel varactor in 40-nm SOI CMOS. In Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 783-785. 9038256. (Asia-Pacific Microwave Conference Proceedings, APMC). https://doi.org/10.1109/APMC46564.2019.9038256

@inproceedings{aef5017680c147539a92bfd506184e08,

title = "A-197.3 dBc/Hz FoMT wideband LC-VCO IC with an I-MOS based novel varactor in 40-nm SOI CMOS",

abstract = "This paper presents a wideband excellent FoMT LC-VCO IC with a novel varactor controlled by a single tuning voltage. The novel varactor includes an Inversion-MOS (IMOS) and an MIM capacitor to widen the capacitance variation. The proposed wideband VCO IC is designed, fabricated and fully evaluated on wafer in 40-nm SOI CMOS. The proposed VCO IC has a completely continuous frequency tuning range from 4.14 GHz to 6.23 GHz (40.3 %) and a-131.0-dBc/Hz measured phase noise at 10-MHz offset frequency from the oscillation frequency of 4.14 GHz. Moreover, the VCO IC has exhibited a measured FoMT of-197.3 dBc/Hz under a 0.34-V supply voltage.",

keywords = "IMOS, LC-VCO, Single control voltage, Wideband",

author = "Mengchu Fang and Akihiko Kumura and Toshihiko Yoshimasu",

year = "2019",

month = dec,

doi = "10.1109/APMC46564.2019.9038256",

language = "English",

series = "Asia-Pacific Microwave Conference Proceedings, APMC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "783--785",

booktitle = "Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019",

note = "2019 IEEE Asia-Pacific Microwave Conference, APMC 2019 ; Conference date: 10-12-2019 Through 13-12-2019",

}

TY - GEN

T1 - A-197.3 dBc/Hz FoMT wideband LC-VCO IC with an I-MOS based novel varactor in 40-nm SOI CMOS

AU - Fang, Mengchu

AU - Kumura, Akihiko

AU - Yoshimasu, Toshihiko

PY - 2019/12

Y1 - 2019/12

N2 - This paper presents a wideband excellent FoMT LC-VCO IC with a novel varactor controlled by a single tuning voltage. The novel varactor includes an Inversion-MOS (IMOS) and an MIM capacitor to widen the capacitance variation. The proposed wideband VCO IC is designed, fabricated and fully evaluated on wafer in 40-nm SOI CMOS. The proposed VCO IC has a completely continuous frequency tuning range from 4.14 GHz to 6.23 GHz (40.3 %) and a-131.0-dBc/Hz measured phase noise at 10-MHz offset frequency from the oscillation frequency of 4.14 GHz. Moreover, the VCO IC has exhibited a measured FoMT of-197.3 dBc/Hz under a 0.34-V supply voltage.

AB - This paper presents a wideband excellent FoMT LC-VCO IC with a novel varactor controlled by a single tuning voltage. The novel varactor includes an Inversion-MOS (IMOS) and an MIM capacitor to widen the capacitance variation. The proposed wideband VCO IC is designed, fabricated and fully evaluated on wafer in 40-nm SOI CMOS. The proposed VCO IC has a completely continuous frequency tuning range from 4.14 GHz to 6.23 GHz (40.3 %) and a-131.0-dBc/Hz measured phase noise at 10-MHz offset frequency from the oscillation frequency of 4.14 GHz. Moreover, the VCO IC has exhibited a measured FoMT of-197.3 dBc/Hz under a 0.34-V supply voltage.

KW - IMOS

KW - LC-VCO

KW - Single control voltage

KW - Wideband

UR - http://www.scopus.com/inward/record.url?scp=85082982251&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85082982251&partnerID=8YFLogxK

U2 - 10.1109/APMC46564.2019.9038256

DO - 10.1109/APMC46564.2019.9038256

M3 - Conference contribution

AN - SCOPUS:85082982251

T3 - Asia-Pacific Microwave Conference Proceedings, APMC

SP - 783

EP - 785

BT - Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019

Y2 - 10 December 2019 through 13 December 2019

ER -