A 20-30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS

Cuilin Chen, Xiao Xu, Xin Yang, Tsuyoshi Sugiura, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

A high efficiency broadband power amplifier IC is proposed for wireless communication systems. The power amplifier IC integrates an adaptive bias circuit which can adjust the collector current of SiGe HBT under large signal operation to improve the efficiency and temperature performance. The power amplifier IC is designed, fabricated and fully measured in 130-nm SiGe BiCMOS. The fabricated power amplifier IC has exhibited an output power of 14.6 dBm with a PAE of 43.8 % at a supply voltage of 1.4 V at 26 GHz. In addition, the power amplifier IC has an output power of over 12 dBm with a PAE of over 31.1 % from 20 to 30 GHz.

Original languageEnglish
Title of host publicationSiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages88-90
Number of pages3
ISBN (Electronic)9781509052363
DOIs
Publication statusPublished - 2017 Mar 8
Event17th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2017 - Phoenix, United States
Duration: 2017 Jan 152017 Jan 18

Other

Other17th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2017
CountryUnited States
CityPhoenix
Period17/1/1517/1/18

Fingerprint

Power amplifiers
Networks (circuits)
Broadband amplifiers
Heterojunction bipolar transistors
Communication systems
Electric potential
Temperature

Keywords

  • adaptive bias circuit
  • broadband power amplifier
  • SiGe BiCMOS technology

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Computer Networks and Communications

Cite this

Chen, C., Xu, X., Yang, X., Sugiura, T., & Yoshimasu, T. (2017). A 20-30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS. In SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (pp. 88-90). [7874379] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIRF.2017.7874379

A 20-30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS. / Chen, Cuilin; Xu, Xiao; Yang, Xin; Sugiura, Tsuyoshi; Yoshimasu, Toshihiko.

SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Institute of Electrical and Electronics Engineers Inc., 2017. p. 88-90 7874379.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, C, Xu, X, Yang, X, Sugiura, T & Yoshimasu, T 2017, A 20-30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS. in SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems., 7874379, Institute of Electrical and Electronics Engineers Inc., pp. 88-90, 17th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2017, Phoenix, United States, 17/1/15. https://doi.org/10.1109/SIRF.2017.7874379
Chen C, Xu X, Yang X, Sugiura T, Yoshimasu T. A 20-30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS. In SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Institute of Electrical and Electronics Engineers Inc. 2017. p. 88-90. 7874379 https://doi.org/10.1109/SIRF.2017.7874379
Chen, Cuilin ; Xu, Xiao ; Yang, Xin ; Sugiura, Tsuyoshi ; Yoshimasu, Toshihiko. / A 20-30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS. SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 88-90
@inproceedings{415a8773c5a84dc7a125e8c0feb8b7b3,
title = "A 20-30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS",
abstract = "A high efficiency broadband power amplifier IC is proposed for wireless communication systems. The power amplifier IC integrates an adaptive bias circuit which can adjust the collector current of SiGe HBT under large signal operation to improve the efficiency and temperature performance. The power amplifier IC is designed, fabricated and fully measured in 130-nm SiGe BiCMOS. The fabricated power amplifier IC has exhibited an output power of 14.6 dBm with a PAE of 43.8 {\%} at a supply voltage of 1.4 V at 26 GHz. In addition, the power amplifier IC has an output power of over 12 dBm with a PAE of over 31.1 {\%} from 20 to 30 GHz.",
keywords = "adaptive bias circuit, broadband power amplifier, SiGe BiCMOS technology",
author = "Cuilin Chen and Xiao Xu and Xin Yang and Tsuyoshi Sugiura and Toshihiko Yoshimasu",
year = "2017",
month = "3",
day = "8",
doi = "10.1109/SIRF.2017.7874379",
language = "English",
pages = "88--90",
booktitle = "SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

TY - GEN

T1 - A 20-30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS

AU - Chen, Cuilin

AU - Xu, Xiao

AU - Yang, Xin

AU - Sugiura, Tsuyoshi

AU - Yoshimasu, Toshihiko

PY - 2017/3/8

Y1 - 2017/3/8

N2 - A high efficiency broadband power amplifier IC is proposed for wireless communication systems. The power amplifier IC integrates an adaptive bias circuit which can adjust the collector current of SiGe HBT under large signal operation to improve the efficiency and temperature performance. The power amplifier IC is designed, fabricated and fully measured in 130-nm SiGe BiCMOS. The fabricated power amplifier IC has exhibited an output power of 14.6 dBm with a PAE of 43.8 % at a supply voltage of 1.4 V at 26 GHz. In addition, the power amplifier IC has an output power of over 12 dBm with a PAE of over 31.1 % from 20 to 30 GHz.

AB - A high efficiency broadband power amplifier IC is proposed for wireless communication systems. The power amplifier IC integrates an adaptive bias circuit which can adjust the collector current of SiGe HBT under large signal operation to improve the efficiency and temperature performance. The power amplifier IC is designed, fabricated and fully measured in 130-nm SiGe BiCMOS. The fabricated power amplifier IC has exhibited an output power of 14.6 dBm with a PAE of 43.8 % at a supply voltage of 1.4 V at 26 GHz. In addition, the power amplifier IC has an output power of over 12 dBm with a PAE of over 31.1 % from 20 to 30 GHz.

KW - adaptive bias circuit

KW - broadband power amplifier

KW - SiGe BiCMOS technology

UR - http://www.scopus.com/inward/record.url?scp=85017291866&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85017291866&partnerID=8YFLogxK

U2 - 10.1109/SIRF.2017.7874379

DO - 10.1109/SIRF.2017.7874379

M3 - Conference contribution

SP - 88

EP - 90

BT - SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

PB - Institute of Electrical and Electronics Engineers Inc.

ER -