A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS

Taufiq Alif Kurniawan, Xin Yang, Xiao Xu, Nobuyuki Itoh, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, a 2.5-GHz band fully integrated high efficiency CMOS power amplifier IC with third harmonic termination technique for low supply voltage was designed, fabricated and fully evaluated in 0.18-μm CMOS technology. Since the proposed third harmonic termination technique effectively increases the PAE by reducing the rms drain current, the total dc power consumption is diminished. To control a threshold voltage for low supply voltage application, a 0.5-V back-gate voltage is applied for the transistor. The power amplifier IC exhibits an output power of 8.5 dBm and a peak PAE of 31.1 % at a supply voltage of only 0.75-V.

Original languageEnglish
Title of host publication2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479975211
DOIs
Publication statusPublished - 2015 Jun 9
Event2015 16th IEEE Annual Wireless and Microwave Technology Conference, WAMICON 2015 - Cocoa Beach, United States
Duration: 2015 Apr 132015 Apr 15

Other

Other2015 16th IEEE Annual Wireless and Microwave Technology Conference, WAMICON 2015
CountryUnited States
CityCocoa Beach
Period15/4/1315/4/15

Fingerprint

Power amplifiers
Electric potential
Drain current
Threshold voltage
Transistors
Electric power utilization

Keywords

  • Back-gate voltage
  • High efficiency
  • Low supply voltage
  • Third harmonic termination

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

Kurniawan, T. A., Yang, X., Xu, X., Itoh, N., & Yoshimasu, T. (2015). A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS. In 2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015 [7120389] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WAMICON.2015.7120389

A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS. / Kurniawan, Taufiq Alif; Yang, Xin; Xu, Xiao; Itoh, Nobuyuki; Yoshimasu, Toshihiko.

2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7120389.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kurniawan, TA, Yang, X, Xu, X, Itoh, N & Yoshimasu, T 2015, A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS. in 2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015., 7120389, Institute of Electrical and Electronics Engineers Inc., 2015 16th IEEE Annual Wireless and Microwave Technology Conference, WAMICON 2015, Cocoa Beach, United States, 15/4/13. https://doi.org/10.1109/WAMICON.2015.7120389
Kurniawan TA, Yang X, Xu X, Itoh N, Yoshimasu T. A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS. In 2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7120389 https://doi.org/10.1109/WAMICON.2015.7120389
Kurniawan, Taufiq Alif ; Yang, Xin ; Xu, Xiao ; Itoh, Nobuyuki ; Yoshimasu, Toshihiko. / A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS. 2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015. Institute of Electrical and Electronics Engineers Inc., 2015.
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abstract = "In this paper, a 2.5-GHz band fully integrated high efficiency CMOS power amplifier IC with third harmonic termination technique for low supply voltage was designed, fabricated and fully evaluated in 0.18-μm CMOS technology. Since the proposed third harmonic termination technique effectively increases the PAE by reducing the rms drain current, the total dc power consumption is diminished. To control a threshold voltage for low supply voltage application, a 0.5-V back-gate voltage is applied for the transistor. The power amplifier IC exhibits an output power of 8.5 dBm and a peak PAE of 31.1 {\%} at a supply voltage of only 0.75-V.",
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