A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS

Taufiq Alif Kurniawan; Xin Yang; Xiao Xu; Nobuyuki Itoh; Toshihiko Yoshimasu

doi:10.1109/WAMICON.2015.7120389

A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS

Taufiq Alif Kurniawan, Xin Yang, Xiao Xu, Nobuyuki Itoh, Toshihiko Yoshimasu

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this paper, a 2.5-GHz band fully integrated high efficiency CMOS power amplifier IC with third harmonic termination technique for low supply voltage was designed, fabricated and fully evaluated in 0.18-μm CMOS technology. Since the proposed third harmonic termination technique effectively increases the PAE by reducing the rms drain current, the total dc power consumption is diminished. To control a threshold voltage for low supply voltage application, a 0.5-V back-gate voltage is applied for the transistor. The power amplifier IC exhibits an output power of 8.5 dBm and a peak PAE of 31.1 % at a supply voltage of only 0.75-V.

Original language	English
Title of host publication	2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479975211
DOIs	https://doi.org/10.1109/WAMICON.2015.7120389
Publication status	Published - 2015 Jun 9
Event	2015 16th IEEE Annual Wireless and Microwave Technology Conference, WAMICON 2015 - Cocoa Beach, United States Duration: 2015 Apr 13 → 2015 Apr 15

Publication series

Name	2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015

Other

Other	2015 16th IEEE Annual Wireless and Microwave Technology Conference, WAMICON 2015
Country/Territory	United States
City	Cocoa Beach
Period	15/4/13 → 15/4/15

Keywords

Back-gate voltage
High efficiency
Low supply voltage
Third harmonic termination

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering

Access to Document

10.1109/WAMICON.2015.7120389

Cite this

Kurniawan, T. A., Yang, X., Xu, X., Itoh, N., & Yoshimasu, T. (2015). A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS. In 2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015 [7120389] (2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WAMICON.2015.7120389

A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS. / Kurniawan, Taufiq Alif; Yang, Xin; Xu, Xiao; Itoh, Nobuyuki; Yoshimasu, Toshihiko.

2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7120389 (2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kurniawan, TA, Yang, X, Xu, X, Itoh, N & Yoshimasu, T 2015, A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS. in 2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015., 7120389, 2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015, Institute of Electrical and Electronics Engineers Inc., 2015 16th IEEE Annual Wireless and Microwave Technology Conference, WAMICON 2015, Cocoa Beach, United States, 15/4/13. https://doi.org/10.1109/WAMICON.2015.7120389

Kurniawan TA, Yang X, Xu X, Itoh N, Yoshimasu T. A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS. In 2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7120389. (2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015). https://doi.org/10.1109/WAMICON.2015.7120389

Kurniawan, Taufiq Alif ; Yang, Xin ; Xu, Xiao ; Itoh, Nobuyuki ; Yoshimasu, Toshihiko. / A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS. 2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015).

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abstract = "In this paper, a 2.5-GHz band fully integrated high efficiency CMOS power amplifier IC with third harmonic termination technique for low supply voltage was designed, fabricated and fully evaluated in 0.18-μm CMOS technology. Since the proposed third harmonic termination technique effectively increases the PAE by reducing the rms drain current, the total dc power consumption is diminished. To control a threshold voltage for low supply voltage application, a 0.5-V back-gate voltage is applied for the transistor. The power amplifier IC exhibits an output power of 8.5 dBm and a peak PAE of 31.1 % at a supply voltage of only 0.75-V.",

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AU - Yoshimasu, Toshihiko

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AB - In this paper, a 2.5-GHz band fully integrated high efficiency CMOS power amplifier IC with third harmonic termination technique for low supply voltage was designed, fabricated and fully evaluated in 0.18-μm CMOS technology. Since the proposed third harmonic termination technique effectively increases the PAE by reducing the rms drain current, the total dc power consumption is diminished. To control a threshold voltage for low supply voltage application, a 0.5-V back-gate voltage is applied for the transistor. The power amplifier IC exhibits an output power of 8.5 dBm and a peak PAE of 31.1 % at a supply voltage of only 0.75-V.

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A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS

Abstract

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Keywords

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