Abstract
In this paper, a 2.5-GHz band fully integrated high efficiency CMOS power amplifier IC with third harmonic termination technique for low supply voltage was designed, fabricated and fully evaluated in 0.18-μm CMOS technology. Since the proposed third harmonic termination technique effectively increases the PAE by reducing the rms drain current, the total dc power consumption is diminished. To control a threshold voltage for low supply voltage application, a 0.5-V back-gate voltage is applied for the transistor. The power amplifier IC exhibits an output power of 8.5 dBm and a peak PAE of 31.1 % at a supply voltage of only 0.75-V.
Original language | English |
---|---|
Title of host publication | 2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Print) | 9781479975211 |
DOIs | |
Publication status | Published - 2015 Jun 9 |
Event | 2015 16th IEEE Annual Wireless and Microwave Technology Conference, WAMICON 2015 - Cocoa Beach, United States Duration: 2015 Apr 13 → 2015 Apr 15 |
Other
Other | 2015 16th IEEE Annual Wireless and Microwave Technology Conference, WAMICON 2015 |
---|---|
Country | United States |
City | Cocoa Beach |
Period | 15/4/13 → 15/4/15 |
Keywords
- Back-gate voltage
- High efficiency
- Low supply voltage
- Third harmonic termination
ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering