Abstract
In this paper, a 2.5-GHz band fully integrated high efficiency CMOS power amplifier IC with third harmonic termination technique for low supply voltage was designed, fabricated and fully evaluated in 0.18-μm CMOS technology. Since the proposed third harmonic termination technique effectively increases the PAE by reducing the rms drain current, the total dc power consumption is diminished. To control a threshold voltage for low supply voltage application, a 0.5-V back-gate voltage is applied for the transistor. The power amplifier IC exhibits an output power of 8.5 dBm and a peak PAE of 31.1 % at a supply voltage of only 0.75-V.
| Original language | English |
|---|---|
| Title of host publication | 2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Print) | 9781479975211 |
| DOIs | |
| Publication status | Published - 2015 Jun 9 |
| Event | 2015 16th IEEE Annual Wireless and Microwave Technology Conference, WAMICON 2015 - Cocoa Beach, United States Duration: 2015 Apr 13 → 2015 Apr 15 |
Other
| Other | 2015 16th IEEE Annual Wireless and Microwave Technology Conference, WAMICON 2015 |
|---|---|
| Country | United States |
| City | Cocoa Beach |
| Period | 15/4/13 → 15/4/15 |
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Keywords
- Back-gate voltage
- High efficiency
- Low supply voltage
- Third harmonic termination
ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering
Cite this
A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS. / Kurniawan, Taufiq Alif; Yang, Xin; Xu, Xiao; Itoh, Nobuyuki; Yoshimasu, Toshihiko.
2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7120389.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS
AU - Kurniawan, Taufiq Alif
AU - Yang, Xin
AU - Xu, Xiao
AU - Itoh, Nobuyuki
AU - Yoshimasu, Toshihiko
PY - 2015/6/9
Y1 - 2015/6/9
N2 - In this paper, a 2.5-GHz band fully integrated high efficiency CMOS power amplifier IC with third harmonic termination technique for low supply voltage was designed, fabricated and fully evaluated in 0.18-μm CMOS technology. Since the proposed third harmonic termination technique effectively increases the PAE by reducing the rms drain current, the total dc power consumption is diminished. To control a threshold voltage for low supply voltage application, a 0.5-V back-gate voltage is applied for the transistor. The power amplifier IC exhibits an output power of 8.5 dBm and a peak PAE of 31.1 % at a supply voltage of only 0.75-V.
AB - In this paper, a 2.5-GHz band fully integrated high efficiency CMOS power amplifier IC with third harmonic termination technique for low supply voltage was designed, fabricated and fully evaluated in 0.18-μm CMOS technology. Since the proposed third harmonic termination technique effectively increases the PAE by reducing the rms drain current, the total dc power consumption is diminished. To control a threshold voltage for low supply voltage application, a 0.5-V back-gate voltage is applied for the transistor. The power amplifier IC exhibits an output power of 8.5 dBm and a peak PAE of 31.1 % at a supply voltage of only 0.75-V.
KW - Back-gate voltage
KW - High efficiency
KW - Low supply voltage
KW - Third harmonic termination
UR - http://www.scopus.com/inward/record.url?scp=84942626934&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84942626934&partnerID=8YFLogxK
U2 - 10.1109/WAMICON.2015.7120389
DO - 10.1109/WAMICON.2015.7120389
M3 - Conference contribution
SN - 9781479975211
BT - 2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015
PB - Institute of Electrical and Electronics Engineers Inc.
ER -