A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS

Xiao Xu, Zheng Sun, Kangyang Xu, Xin Yang, Taufiq Kurniawan, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A fully integrated class-E power amplifier IC in 180-nm CMOS is presented for 2.5-GHz band short range wireless communication systems. To realize high efficiency with low operation voltage, a class-E amplifier with back gate effect has been designed, fabricated and fully evaluated. The proposed amplifier IC can operate at a supply voltage from 0.5 V to 1.5 V. The amplifier IC exhibits a P1dB of 6.9 dBm and a saturated output power of 10.7 dBm with a maximum drain efficiency of 36.4% at a 1.0 V power supply.

Original languageEnglish
Title of host publicationRFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479955039
DOIs
Publication statusPublished - 2014 Oct 21
Event2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014 - Hefei
Duration: 2014 Aug 272014 Aug 30

Other

Other2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014
CityHefei
Period14/8/2714/8/30

Fingerprint

Power amplifiers
Communication
Electric potential
Communication systems

Keywords

  • Class-E
  • CMOS
  • Low-voltage
  • Power amplifier
  • Short range communications

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

Xu, X., Sun, Z., Xu, K., Yang, X., Kurniawan, T., & Yoshimasu, T. (2014). A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS. In RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz [6933241] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2014.6933241

A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS. / Xu, Xiao; Sun, Zheng; Xu, Kangyang; Yang, Xin; Kurniawan, Taufiq; Yoshimasu, Toshihiko.

RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz. Institute of Electrical and Electronics Engineers Inc., 2014. 6933241.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Xu, X, Sun, Z, Xu, K, Yang, X, Kurniawan, T & Yoshimasu, T 2014, A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS. in RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz., 6933241, Institute of Electrical and Electronics Engineers Inc., 2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014, Hefei, 14/8/27. https://doi.org/10.1109/RFIT.2014.6933241
Xu X, Sun Z, Xu K, Yang X, Kurniawan T, Yoshimasu T. A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS. In RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz. Institute of Electrical and Electronics Engineers Inc. 2014. 6933241 https://doi.org/10.1109/RFIT.2014.6933241
Xu, Xiao ; Sun, Zheng ; Xu, Kangyang ; Yang, Xin ; Kurniawan, Taufiq ; Yoshimasu, Toshihiko. / A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS. RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz. Institute of Electrical and Electronics Engineers Inc., 2014.
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