A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS

Xiao Xu; Zheng Sun; Kangyang Xu; Xin Yang; Taufiq Kurniawan; Toshihiko Yoshimasu

doi:10.1109/RFIT.2014.6933241

A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS

Xiao Xu^*, Zheng Sun, Kangyang Xu, Xin Yang, Taufiq Kurniawan, Toshihiko Yoshimasu

^*Corresponding author for this work

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

A fully integrated class-E power amplifier IC in 180-nm CMOS is presented for 2.5-GHz band short range wireless communication systems. To realize high efficiency with low operation voltage, a class-E amplifier with back gate effect has been designed, fabricated and fully evaluated. The proposed amplifier IC can operate at a supply voltage from 0.5 V to 1.5 V. The amplifier IC exhibits a P1dB of 6.9 dBm and a saturated output power of 10.7 dBm with a maximum drain efficiency of 36.4% at a 1.0 V power supply.

Original language	English
Title of host publication	RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology
Subtitle of host publication	Silicon Technology Heats Up for THz
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479955039
DOIs	https://doi.org/10.1109/RFIT.2014.6933241
Publication status	Published - 2014 Oct 21
Event	2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014 - Hefei, China Duration: 2014 Aug 27 → 2014 Aug 30

Publication series

Name	RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz

Conference

Conference	2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014
Country/Territory	China
City	Hefei
Period	14/8/27 → 14/8/30

Keywords

CMOS
Class-E
Low-voltage
Power amplifier
Short range communications

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering

Access to Document

10.1109/RFIT.2014.6933241

Cite this

Xu, X., Sun, Z., Xu, K., Yang, X., Kurniawan, T., & Yoshimasu, T. (2014). A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS. In RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz [6933241] (RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2014.6933241

A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS. / Xu, Xiao; Sun, Zheng; Xu, Kangyang et al.

RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz. Institute of Electrical and Electronics Engineers Inc., 2014. 6933241 (RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Xu, X, Sun, Z, Xu, K, Yang, X, Kurniawan, T & Yoshimasu, T 2014, A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS. in RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz., 6933241, RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz, Institute of Electrical and Electronics Engineers Inc., 2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014, Hefei, China, 14/8/27. https://doi.org/10.1109/RFIT.2014.6933241

Xu X, Sun Z, Xu K, Yang X, Kurniawan T, Yoshimasu T. A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS. In RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz. Institute of Electrical and Electronics Engineers Inc. 2014. 6933241. (RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz). doi: 10.1109/RFIT.2014.6933241

Xu, Xiao ; Sun, Zheng ; Xu, Kangyang et al. / A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS. RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz. Institute of Electrical and Electronics Engineers Inc., 2014. (RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz).

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abstract = "A fully integrated class-E power amplifier IC in 180-nm CMOS is presented for 2.5-GHz band short range wireless communication systems. To realize high efficiency with low operation voltage, a class-E amplifier with back gate effect has been designed, fabricated and fully evaluated. The proposed amplifier IC can operate at a supply voltage from 0.5 V to 1.5 V. The amplifier IC exhibits a P1dB of 6.9 dBm and a saturated output power of 10.7 dBm with a maximum drain efficiency of 36.4% at a 1.0 V power supply.",

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AU - Sun, Zheng

AU - Xu, Kangyang

AU - Yang, Xin

AU - Kurniawan, Taufiq

AU - Yoshimasu, Toshihiko

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N2 - A fully integrated class-E power amplifier IC in 180-nm CMOS is presented for 2.5-GHz band short range wireless communication systems. To realize high efficiency with low operation voltage, a class-E amplifier with back gate effect has been designed, fabricated and fully evaluated. The proposed amplifier IC can operate at a supply voltage from 0.5 V to 1.5 V. The amplifier IC exhibits a P1dB of 6.9 dBm and a saturated output power of 10.7 dBm with a maximum drain efficiency of 36.4% at a 1.0 V power supply.

AB - A fully integrated class-E power amplifier IC in 180-nm CMOS is presented for 2.5-GHz band short range wireless communication systems. To realize high efficiency with low operation voltage, a class-E amplifier with back gate effect has been designed, fabricated and fully evaluated. The proposed amplifier IC can operate at a supply voltage from 0.5 V to 1.5 V. The amplifier IC exhibits a P1dB of 6.9 dBm and a saturated output power of 10.7 dBm with a maximum drain efficiency of 36.4% at a 1.0 V power supply.

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A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS

Abstract

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Keywords

ASJC Scopus subject areas

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