A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS

Xiao Xu, Zheng Sun, Kangyang Xu, Xin Yang, Taufiq Kurniawan, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A fully integrated class-E power amplifier IC in 180-nm CMOS is presented for 2.5-GHz band short range wireless communication systems. To realize high efficiency with low operation voltage, a class-E amplifier with back gate effect has been designed, fabricated and fully evaluated. The proposed amplifier IC can operate at a supply voltage from 0.5 V to 1.5 V. The amplifier IC exhibits a P1dB of 6.9 dBm and a saturated output power of 10.7 dBm with a maximum drain efficiency of 36.4% at a 1.0 V power supply.

Original languageEnglish
Title of host publicationRFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology
Subtitle of host publicationSilicon Technology Heats Up for THz
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479955039
DOIs
Publication statusPublished - 2014 Oct 21
Event2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014 - Hefei, China
Duration: 2014 Aug 272014 Aug 30

Publication series

NameRFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz

Conference

Conference2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014
CountryChina
CityHefei
Period14/8/2714/8/30

Keywords

  • CMOS
  • Class-E
  • Low-voltage
  • Power amplifier
  • Short range communications

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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    Xu, X., Sun, Z., Xu, K., Yang, X., Kurniawan, T., & Yoshimasu, T. (2014). A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS. In RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz [6933241] (RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2014.6933241