A 2.5-GHz band low-voltage high efficiency class-E power amplifier IC with body effect

Taufiq Alif Kurniawan, Xin Yang, Xiao Xu, Zheng Sun, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a fully integrated class-E power amplifier IC with body effect to achieve high efficiency and high gain at low supply voltage for 2.5-GHz band short range wireless communication systems. The class-E amplifier IC is designed, fabricated and fully evaluated in 180-nm CMOS. The proposed power amplifier IC exhibits a small-signal gain of 10.8 dB and a saturated output power of 10.8 dBm with a drain efficiency of 35.0 % at a supply voltage of only 1-V.

Original languageEnglish
Title of host publicationProceedings of the 14th International Symposium on Integrated Circuits, ISIC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages160-163
Number of pages4
ISBN (Print)9781479948338
DOIs
Publication statusPublished - 2015 Feb 2
Event14th International Symposium on Integrated Circuits, ISIC 2014 - Singapore
Duration: 2014 Dec 102014 Dec 12

Other

Other14th International Symposium on Integrated Circuits, ISIC 2014
CitySingapore
Period14/12/1014/12/12

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Keywords

  • 180-nm CMOS
  • 2.5-GHz band
  • body effect
  • class-E amplifier IC

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Kurniawan, T. A., Yang, X., Xu, X., Sun, Z., & Yoshimasu, T. (2015). A 2.5-GHz band low-voltage high efficiency class-E power amplifier IC with body effect. In Proceedings of the 14th International Symposium on Integrated Circuits, ISIC 2014 (pp. 160-163). [7029483] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISICIR.2014.7029483