A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications

Taufiq Alif Kurniawan, Xin Yang, Xiao Xu, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents a fully integrated low-voltage CMOS power amplifier (PA) IC for 2.5-GHz band short range wireless applications. The amplifier IC is designed, fabricated and fully evaluated in 180-nm CMOS technology. To realize high efficiency performance, the parallel switching transistor is proposed and combined with third harmonic tuning technique. In addition, for low voltage operations, the positive body bias is injected to the main switching transistor. The proposed CMOS PA IC has exhibited a P1dB of 8.0 dBm, a saturated output power of 10.1 dBm and a peak PAE of 34.5 % at a supply voltage of 1.0 V.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages219-222
Number of pages4
ISBN (Print)9782874870392
DOIs
Publication statusPublished - 2015 Dec 2
Event45th European Microwave Conference, EuMC 2015 - Paris, France
Duration: 2015 Sep 72015 Sep 10

Other

Other45th European Microwave Conference, EuMC 2015
CountryFrance
CityParis
Period15/9/715/9/10

Fingerprint

power amplifiers
Power amplifiers
low voltage
CMOS
Transistors
transistors
Electric potential
Tuning
amplifiers
tuning
harmonics
output
electric potential

Keywords

  • low voltage
  • parallel switching transistor
  • short range wireless applications
  • third harmonic tuning technique

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Radiation

Cite this

Kurniawan, T. A., Yang, X., Xu, X., & Yoshimasu, T. (2015). A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications. In European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC (pp. 219-222). [7345739] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EuMC.2015.7345739

A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications. / Kurniawan, Taufiq Alif; Yang, Xin; Xu, Xiao; Yoshimasu, Toshihiko.

European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC. Institute of Electrical and Electronics Engineers Inc., 2015. p. 219-222 7345739.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kurniawan, TA, Yang, X, Xu, X & Yoshimasu, T 2015, A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications. in European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC., 7345739, Institute of Electrical and Electronics Engineers Inc., pp. 219-222, 45th European Microwave Conference, EuMC 2015, Paris, France, 15/9/7. https://doi.org/10.1109/EuMC.2015.7345739
Kurniawan TA, Yang X, Xu X, Yoshimasu T. A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications. In European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC. Institute of Electrical and Electronics Engineers Inc. 2015. p. 219-222. 7345739 https://doi.org/10.1109/EuMC.2015.7345739
Kurniawan, Taufiq Alif ; Yang, Xin ; Xu, Xiao ; Yoshimasu, Toshihiko. / A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications. European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 219-222
@inproceedings{fbccc7a18cb744789f939b270caf2e3e,
title = "A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications",
abstract = "This paper presents a fully integrated low-voltage CMOS power amplifier (PA) IC for 2.5-GHz band short range wireless applications. The amplifier IC is designed, fabricated and fully evaluated in 180-nm CMOS technology. To realize high efficiency performance, the parallel switching transistor is proposed and combined with third harmonic tuning technique. In addition, for low voltage operations, the positive body bias is injected to the main switching transistor. The proposed CMOS PA IC has exhibited a P1dB of 8.0 dBm, a saturated output power of 10.1 dBm and a peak PAE of 34.5 {\%} at a supply voltage of 1.0 V.",
keywords = "low voltage, parallel switching transistor, short range wireless applications, third harmonic tuning technique",
author = "Kurniawan, {Taufiq Alif} and Xin Yang and Xiao Xu and Toshihiko Yoshimasu",
year = "2015",
month = "12",
day = "2",
doi = "10.1109/EuMC.2015.7345739",
language = "English",
isbn = "9782874870392",
pages = "219--222",
booktitle = "European Microwave Week 2015: {"}Freedom Through Microwaves{"}, EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications

AU - Kurniawan, Taufiq Alif

AU - Yang, Xin

AU - Xu, Xiao

AU - Yoshimasu, Toshihiko

PY - 2015/12/2

Y1 - 2015/12/2

N2 - This paper presents a fully integrated low-voltage CMOS power amplifier (PA) IC for 2.5-GHz band short range wireless applications. The amplifier IC is designed, fabricated and fully evaluated in 180-nm CMOS technology. To realize high efficiency performance, the parallel switching transistor is proposed and combined with third harmonic tuning technique. In addition, for low voltage operations, the positive body bias is injected to the main switching transistor. The proposed CMOS PA IC has exhibited a P1dB of 8.0 dBm, a saturated output power of 10.1 dBm and a peak PAE of 34.5 % at a supply voltage of 1.0 V.

AB - This paper presents a fully integrated low-voltage CMOS power amplifier (PA) IC for 2.5-GHz band short range wireless applications. The amplifier IC is designed, fabricated and fully evaluated in 180-nm CMOS technology. To realize high efficiency performance, the parallel switching transistor is proposed and combined with third harmonic tuning technique. In addition, for low voltage operations, the positive body bias is injected to the main switching transistor. The proposed CMOS PA IC has exhibited a P1dB of 8.0 dBm, a saturated output power of 10.1 dBm and a peak PAE of 34.5 % at a supply voltage of 1.0 V.

KW - low voltage

KW - parallel switching transistor

KW - short range wireless applications

KW - third harmonic tuning technique

UR - http://www.scopus.com/inward/record.url?scp=84964350766&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84964350766&partnerID=8YFLogxK

U2 - 10.1109/EuMC.2015.7345739

DO - 10.1109/EuMC.2015.7345739

M3 - Conference contribution

SN - 9782874870392

SP - 219

EP - 222

BT - European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC

PB - Institute of Electrical and Electronics Engineers Inc.

ER -