A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications

Taufiq Alif Kurniawan, Xin Yang, Xiao Xu, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

This paper presents a fully integrated low-voltage CMOS power amplifier (PA) IC for 2.5-GHz band short range wireless applications. The amplifier IC is designed, fabricated and fully evaluated in 180-nm CMOS technology. To realize high efficiency performance, the parallel switching transistor is proposed and combined with third harmonic tuning technique. In addition, for low voltage operations, the positive body bias is injected to the main switching transistor. The proposed CMOS PA IC has exhibited a P1dB of 8.0 dBm, a saturated output power of 10.1 dBm and a peak PAE of 34.5 % at a supply voltage of 1.0 V.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages219-222
Number of pages4
ISBN (Print)9782874870392
DOIs
Publication statusPublished - 2015 Dec 2
Event45th European Microwave Conference, EuMC 2015 - Paris, France
Duration: 2015 Sept 72015 Sept 10

Other

Other45th European Microwave Conference, EuMC 2015
Country/TerritoryFrance
CityParis
Period15/9/715/9/10

Keywords

  • low voltage
  • parallel switching transistor
  • short range wireless applications
  • third harmonic tuning technique

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Radiation

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