Abstract
This paper presents a fully integrated low-voltage CMOS power amplifier (PA) IC for 2.5-GHz band short range wireless applications. The amplifier IC is designed, fabricated and fully evaluated in 180-nm CMOS technology. To realize high efficiency performance, the parallel switching transistor is proposed and combined with third harmonic tuning technique. In addition, for low voltage operations, the positive body bias is injected to the main switching transistor. The proposed CMOS PA IC has exhibited a P1dB of 8.0 dBm, a saturated output power of 10.1 dBm and a peak PAE of 34.5 % at a supply voltage of 1.0 V.
Original language | English |
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Title of host publication | European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 219-222 |
Number of pages | 4 |
ISBN (Print) | 9782874870392 |
DOIs | |
Publication status | Published - 2015 Dec 2 |
Event | 45th European Microwave Conference, EuMC 2015 - Paris, France Duration: 2015 Sept 7 → 2015 Sept 10 |
Other
Other | 45th European Microwave Conference, EuMC 2015 |
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Country/Territory | France |
City | Paris |
Period | 15/9/7 → 15/9/10 |
Keywords
- low voltage
- parallel switching transistor
- short range wireless applications
- third harmonic tuning technique
ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering
- Radiation