A 26-GHz-band high efficiency stacked-FET power amplifier ic with adaptively controlled load and bias circuits in 40-nm SOI CMOS

Tsuyoshi Sugiura, Cuilin Chen, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents a 26 GHz band high efficiency power amplifier (PA) IC with adaptively controlled load and bias conditions. An adaptively controlled load matching circuit cooperating with an adaptive bias circuit is proposed to achieve a high efficiency PA IC in a broad range of input power. The chip of PA IC is fabricated using 40-nm silicon on insulator (SOI) CMOS process and evaluated on wafer. The fabricated PA IC has shown a peak PAE of 40.2% and a saturation output power (Psat) of 20.5 dBm with a 4.0 V applied voltage on Vdd at 26GHz. A PAE of over 35% at an input power between-2 dBm and 7 dBm has been realized.

Original languageEnglish
Title of host publicationProceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1700-1702
Number of pages3
ISBN (Electronic)9781728135175
DOIs
Publication statusPublished - 2019 Dec
Event2019 IEEE Asia-Pacific Microwave Conference, APMC 2019 - Singapore, Singapore
Duration: 2019 Dec 102019 Dec 13

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume2019-December

Conference

Conference2019 IEEE Asia-Pacific Microwave Conference, APMC 2019
CountrySingapore
CitySingapore
Period19/12/1019/12/13

Keywords

  • Adaptive bias
  • Adaptively controlled load
  • High efficiency
  • SOI CMOS

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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