A 28-GHz-band highly linear stacked-FET power amplifier IC with high back-off PAE in 56-nm SOI CMOS

Cuilin Chen, Tsuyoshi Sugiura, Toshihiko Yoshimasu

Research output: Contribution to journalArticlepeer-review

Abstract

This paper presents a 28-GHz-band highly linear stacked- FET power amplifier (PA) IC. A 4-stacked-FET structure is employed for high output power considering the low breakdown voltage of scaled MOSFET transistors. A novel adaptive bias circuit is proposed to dynamically control the gate-to-source bias voltage for amplification MOSFETs. The novel adaptive bias allows the PA to attain high linearity with high back-off efficiency. In addition, the third-order intermodulation distortion (IM3) is improved by a multi-cascode structure. The PA IC is designed, fabricated and fully tested in 56-nm SOI CMOS technology. At a supply voltage of 4 V, the PA IC has achieved an output power of 20.0 dBm with a PAE as high as 38.1% at the 1-dB gain compression point (P1dB). Moreover, PAEs at 3-dB and 6-dB back-off from P1dB are 36.2% and 28.7%, respectively. The PA IC exhibits an output third-order intercept point (OIP3) of 25.0 dBm.

Original languageEnglish
Pages (from-to)153-160
Number of pages8
JournalIEICE Transactions on Electronics
VolumeE103.C
Issue number4
DOIs
Publication statusPublished - 2020

Keywords

  • Adaptive bias
  • High back-off efficiency
  • High linearity
  • SOI CMOS

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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