A 28-GHz-band stacked FET linear power amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS

Cuilin Chen, Tsuyoshi Sugiura, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents a high efficiency linear stacked FET power amplifier (PA) IC for 5G wireless communication systems. An adaptive bias circuit is used to enhance linearity and back-off efficiency. In addition, third-order trans-conductance component (gm3) is cancelled by multi-cascode structure. The PA IC is designed, fabricated and fully evaluated in 56-nm SOI CMOS. At a supply voltage of 4 V, the PA IC has exhibited an output power of 20.0 dBm and a PAE of 38.1% at 1-dB gain compression point (P1dB). The PAEs at 3 dB and 6 dB back-off from P1dB are 36.2 % and 28.7 %, respectively. The output IP3 of 25.0 dBm is obtained.

Original languageEnglish
Title of host publication2019 IEEE Radio and Wireless Symposium, RWS 2019
PublisherIEEE Computer Society
ISBN (Electronic)9781538659441
DOIs
Publication statusPublished - 2019 May 14
Event2019 IEEE Radio and Wireless Symposium, RWS 2019 - Orlando, United States
Duration: 2019 Jan 202019 Jan 23

Publication series

NameIEEE Radio and Wireless Symposium, RWS
ISSN (Print)2164-2958
ISSN (Electronic)2164-2974

Conference

Conference2019 IEEE Radio and Wireless Symposium, RWS 2019
CountryUnited States
CityOrlando
Period19/1/2019/1/23

Keywords

  • 5G
  • Adaptive bias
  • High efficiency
  • High linearity
  • SOI CMOS

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Communication

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  • Cite this

    Chen, C., Sugiura, T., & Yoshimasu, T. (2019). A 28-GHz-band stacked FET linear power amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS. In 2019 IEEE Radio and Wireless Symposium, RWS 2019 [8714268] (IEEE Radio and Wireless Symposium, RWS). IEEE Computer Society. https://doi.org/10.1109/RWS.2019.8714268