A 28-GHz-band stacked FET linear power amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS

Cuilin Chen, Tsuyoshi Sugiura, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a high efficiency linear stacked FET power amplifier (PA) IC for 5G wireless communication systems. An adaptive bias circuit is used to enhance linearity and back-off efficiency. In addition, third-order trans-conductance component (gm3) is cancelled by multi-cascode structure. The PA IC is designed, fabricated and fully evaluated in 56-nm SOI CMOS. At a supply voltage of 4 V, the PA IC has exhibited an output power of 20.0 dBm and a PAE of 38.1% at 1-dB gain compression point (P1dB). The PAEs at 3 dB and 6 dB back-off from P1dB are 36.2 % and 28.7 %, respectively. The output IP3 of 25.0 dBm is obtained.

Original languageEnglish
Title of host publication2019 IEEE Radio and Wireless Symposium, RWS 2019
PublisherIEEE Computer Society
ISBN (Electronic)9781538659441
DOIs
Publication statusPublished - 2019 May 14
Event2019 IEEE Radio and Wireless Symposium, RWS 2019 - Orlando, United States
Duration: 2019 Jan 202019 Jan 23

Publication series

NameIEEE Radio and Wireless Symposium, RWS
ISSN (Print)2164-2958
ISSN (Electronic)2164-2974

Conference

Conference2019 IEEE Radio and Wireless Symposium, RWS 2019
CountryUnited States
CityOrlando
Period19/1/2019/1/23

Fingerprint

Field effect transistors
Power amplifiers
efficiency
Communication systems
communication system
Networks (circuits)
Electric potential
supply
trend

Keywords

  • 5G
  • Adaptive bias
  • High efficiency
  • High linearity
  • SOI CMOS

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Communication

Cite this

Chen, C., Sugiura, T., & Yoshimasu, T. (2019). A 28-GHz-band stacked FET linear power amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS. In 2019 IEEE Radio and Wireless Symposium, RWS 2019 [8714268] (IEEE Radio and Wireless Symposium, RWS). IEEE Computer Society. https://doi.org/10.1109/RWS.2019.8714268

A 28-GHz-band stacked FET linear power amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS. / Chen, Cuilin; Sugiura, Tsuyoshi; Yoshimasu, Toshihiko.

2019 IEEE Radio and Wireless Symposium, RWS 2019. IEEE Computer Society, 2019. 8714268 (IEEE Radio and Wireless Symposium, RWS).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, C, Sugiura, T & Yoshimasu, T 2019, A 28-GHz-band stacked FET linear power amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS. in 2019 IEEE Radio and Wireless Symposium, RWS 2019., 8714268, IEEE Radio and Wireless Symposium, RWS, IEEE Computer Society, 2019 IEEE Radio and Wireless Symposium, RWS 2019, Orlando, United States, 19/1/20. https://doi.org/10.1109/RWS.2019.8714268
Chen C, Sugiura T, Yoshimasu T. A 28-GHz-band stacked FET linear power amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS. In 2019 IEEE Radio and Wireless Symposium, RWS 2019. IEEE Computer Society. 2019. 8714268. (IEEE Radio and Wireless Symposium, RWS). https://doi.org/10.1109/RWS.2019.8714268
Chen, Cuilin ; Sugiura, Tsuyoshi ; Yoshimasu, Toshihiko. / A 28-GHz-band stacked FET linear power amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS. 2019 IEEE Radio and Wireless Symposium, RWS 2019. IEEE Computer Society, 2019. (IEEE Radio and Wireless Symposium, RWS).
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abstract = "This paper presents a high efficiency linear stacked FET power amplifier (PA) IC for 5G wireless communication systems. An adaptive bias circuit is used to enhance linearity and back-off efficiency. In addition, third-order trans-conductance component (gm3) is cancelled by multi-cascode structure. The PA IC is designed, fabricated and fully evaluated in 56-nm SOI CMOS. At a supply voltage of 4 V, the PA IC has exhibited an output power of 20.0 dBm and a PAE of 38.1{\%} at 1-dB gain compression point (P1dB). The PAEs at 3 dB and 6 dB back-off from P1dB are 36.2 {\%} and 28.7 {\%}, respectively. The output IP3 of 25.0 dBm is obtained.",
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