A 30-GHz band high-efficiency Class-J power amplifier IC in 120-nm SiGe HBT technology

Cuilin Chen; Xin Yang; Toshihiko Yoshimasu

doi:10.1109/RFIT.2016.7578122

A 30-GHz band high-efficiency Class-J power amplifier IC in 120-nm SiGe HBT technology

Cuilin Chen, Xin Yang, Toshihiko Yoshimasu

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

A 30-GHz band power amplifier (PA) IC is designed, fabricated and fully tested in 120-nm SiGe HBT process. The impedances of the output matching network are optimized at both the fundamental and second harmonic for a high power added efficiency (PAE). At a supply voltage of 1.4 V, the PA IC has exhibited a measured output P1dB of 10.8 dBm, a peak PAE of 32.4%, and a small-signal gain of 9.1 dB at 30 GHz.

Original language	English
Title of host publication	RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509012350
DOIs	https://doi.org/10.1109/RFIT.2016.7578122
Publication status	Published - 2016 Sept 27
Event	2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016 - Taipei, Taiwan, Province of China Duration: 2016 Aug 24 → 2016 Aug 26

Other

Other	2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016
Country/Territory	Taiwan, Province of China
City	Taipei
Period	16/8/24 → 16/8/26

Keywords

120-nm SiGe HBT
30 GHz
Class-J
Power Amplifier

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering
Instrumentation

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10.1109/RFIT.2016.7578122

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A 30-GHz band high-efficiency Class-J power amplifier IC in 120-nm SiGe HBT technology. / Chen, Cuilin; Yang, Xin; Yoshimasu, Toshihiko.

RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology. Institute of Electrical and Electronics Engineers Inc., 2016. 7578122.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, C, Yang, X & Yoshimasu, T 2016, A 30-GHz band high-efficiency Class-J power amplifier IC in 120-nm SiGe HBT technology. in RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology., 7578122, Institute of Electrical and Electronics Engineers Inc., 2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016, Taipei, Taiwan, Province of China, 16/8/24. https://doi.org/10.1109/RFIT.2016.7578122

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title = "A 30-GHz band high-efficiency Class-J power amplifier IC in 120-nm SiGe HBT technology",

abstract = "A 30-GHz band power amplifier (PA) IC is designed, fabricated and fully tested in 120-nm SiGe HBT process. The impedances of the output matching network are optimized at both the fundamental and second harmonic for a high power added efficiency (PAE). At a supply voltage of 1.4 V, the PA IC has exhibited a measured output P1dB of 10.8 dBm, a peak PAE of 32.4%, and a small-signal gain of 9.1 dB at 30 GHz.",

keywords = "120-nm SiGe HBT, 30 GHz, Class-J, Power Amplifier",

author = "Cuilin Chen and Xin Yang and Toshihiko Yoshimasu",

year = "2016",

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doi = "10.1109/RFIT.2016.7578122",

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AU - Chen, Cuilin

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Y1 - 2016/9/27

N2 - A 30-GHz band power amplifier (PA) IC is designed, fabricated and fully tested in 120-nm SiGe HBT process. The impedances of the output matching network are optimized at both the fundamental and second harmonic for a high power added efficiency (PAE). At a supply voltage of 1.4 V, the PA IC has exhibited a measured output P1dB of 10.8 dBm, a peak PAE of 32.4%, and a small-signal gain of 9.1 dB at 30 GHz.

AB - A 30-GHz band power amplifier (PA) IC is designed, fabricated and fully tested in 120-nm SiGe HBT process. The impedances of the output matching network are optimized at both the fundamental and second harmonic for a high power added efficiency (PAE). At a supply voltage of 1.4 V, the PA IC has exhibited a measured output P1dB of 10.8 dBm, a peak PAE of 32.4%, and a small-signal gain of 9.1 dB at 30 GHz.

KW - 120-nm SiGe HBT

KW - 30 GHz

KW - Class-J

KW - Power Amplifier

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M3 - Conference contribution

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BT - RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 24 August 2016 through 26 August 2016

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A 30-GHz band high-efficiency Class-J power amplifier IC in 120-nm SiGe HBT technology

Abstract

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Keywords

ASJC Scopus subject areas

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