A 30-GHz band high-efficiency Class-J power amplifier IC in 120-nm SiGe HBT technology

Cuilin Chen, Xin Yang, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A 30-GHz band power amplifier (PA) IC is designed, fabricated and fully tested in 120-nm SiGe HBT process. The impedances of the output matching network are optimized at both the fundamental and second harmonic for a high power added efficiency (PAE). At a supply voltage of 1.4 V, the PA IC has exhibited a measured output P1dB of 10.8 dBm, a peak PAE of 32.4%, and a small-signal gain of 9.1 dB at 30 GHz.

Original languageEnglish
Title of host publicationRFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509012350
DOIs
Publication statusPublished - 2016 Sep 27
Event2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016 - Taipei, Taiwan, Province of China
Duration: 2016 Aug 242016 Aug 26

Other

Other2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016
CountryTaiwan, Province of China
CityTaipei
Period16/8/2416/8/26

Keywords

  • 120-nm SiGe HBT
  • 30 GHz
  • Class-J
  • Power Amplifier

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Instrumentation

Fingerprint Dive into the research topics of 'A 30-GHz band high-efficiency Class-J power amplifier IC in 120-nm SiGe HBT technology'. Together they form a unique fingerprint.

  • Cite this

    Chen, C., Yang, X., & Yoshimasu, T. (2016). A 30-GHz band high-efficiency Class-J power amplifier IC in 120-nm SiGe HBT technology. In RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology [7578122] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2016.7578122