A 30-GHz band low-insertion loss and high-isolation SPDT switch IC in 120-nm SiGe HBT

Cuilin Chen, Fenfen Tuo, Xiao Xu, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A 30-GHz band Single-Pole Double-Throw (SPDT) switch IC is designed, fabricated and fully evaluated in 120-nm SiGe heterojunction bipolar transistor (HBT) process. The SPDT switch IC employs diode-connected HBTs and LC resonant circuits to improve the insertion loss and isolation. The fabricated SPDT switch IC has exhibited an insertion loss of 3.3 dB, an isolation of 21.8 dB and an input-referred 1-dB compression point (P1dB) of 16 dBm at 32 GHz.

Original languageEnglish
Title of host publicationRFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509012350
DOIs
Publication statusPublished - 2016 Sep 27
Event2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016 - Taipei, Taiwan, Province of China
Duration: 2016 Aug 242016 Aug 26

Other

Other2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016
CountryTaiwan, Province of China
CityTaipei
Period16/8/2416/8/26

Fingerprint

Heterojunction bipolar transistors
bipolar transistors
Insertion losses
insertion loss
heterojunctions
Poles
isolation
poles
switches
Switches
Resonant circuits
Diodes
diodes

Keywords

  • 120-nm SiGe HBT
  • 30 GHz
  • Low-insertion loss
  • SPDT switch IC

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Instrumentation

Cite this

Chen, C., Tuo, F., Xu, X., & Yoshimasu, T. (2016). A 30-GHz band low-insertion loss and high-isolation SPDT switch IC in 120-nm SiGe HBT. In RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology [7578134] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2016.7578134

A 30-GHz band low-insertion loss and high-isolation SPDT switch IC in 120-nm SiGe HBT. / Chen, Cuilin; Tuo, Fenfen; Xu, Xiao; Yoshimasu, Toshihiko.

RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology. Institute of Electrical and Electronics Engineers Inc., 2016. 7578134.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, C, Tuo, F, Xu, X & Yoshimasu, T 2016, A 30-GHz band low-insertion loss and high-isolation SPDT switch IC in 120-nm SiGe HBT. in RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology., 7578134, Institute of Electrical and Electronics Engineers Inc., 2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016, Taipei, Taiwan, Province of China, 16/8/24. https://doi.org/10.1109/RFIT.2016.7578134
Chen C, Tuo F, Xu X, Yoshimasu T. A 30-GHz band low-insertion loss and high-isolation SPDT switch IC in 120-nm SiGe HBT. In RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology. Institute of Electrical and Electronics Engineers Inc. 2016. 7578134 https://doi.org/10.1109/RFIT.2016.7578134
Chen, Cuilin ; Tuo, Fenfen ; Xu, Xiao ; Yoshimasu, Toshihiko. / A 30-GHz band low-insertion loss and high-isolation SPDT switch IC in 120-nm SiGe HBT. RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology. Institute of Electrical and Electronics Engineers Inc., 2016.
@inproceedings{29cf288bba8741faad2f308d945a5c54,
title = "A 30-GHz band low-insertion loss and high-isolation SPDT switch IC in 120-nm SiGe HBT",
abstract = "A 30-GHz band Single-Pole Double-Throw (SPDT) switch IC is designed, fabricated and fully evaluated in 120-nm SiGe heterojunction bipolar transistor (HBT) process. The SPDT switch IC employs diode-connected HBTs and LC resonant circuits to improve the insertion loss and isolation. The fabricated SPDT switch IC has exhibited an insertion loss of 3.3 dB, an isolation of 21.8 dB and an input-referred 1-dB compression point (P1dB) of 16 dBm at 32 GHz.",
keywords = "120-nm SiGe HBT, 30 GHz, Low-insertion loss, SPDT switch IC",
author = "Cuilin Chen and Fenfen Tuo and Xiao Xu and Toshihiko Yoshimasu",
year = "2016",
month = "9",
day = "27",
doi = "10.1109/RFIT.2016.7578134",
language = "English",
booktitle = "RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

TY - GEN

T1 - A 30-GHz band low-insertion loss and high-isolation SPDT switch IC in 120-nm SiGe HBT

AU - Chen, Cuilin

AU - Tuo, Fenfen

AU - Xu, Xiao

AU - Yoshimasu, Toshihiko

PY - 2016/9/27

Y1 - 2016/9/27

N2 - A 30-GHz band Single-Pole Double-Throw (SPDT) switch IC is designed, fabricated and fully evaluated in 120-nm SiGe heterojunction bipolar transistor (HBT) process. The SPDT switch IC employs diode-connected HBTs and LC resonant circuits to improve the insertion loss and isolation. The fabricated SPDT switch IC has exhibited an insertion loss of 3.3 dB, an isolation of 21.8 dB and an input-referred 1-dB compression point (P1dB) of 16 dBm at 32 GHz.

AB - A 30-GHz band Single-Pole Double-Throw (SPDT) switch IC is designed, fabricated and fully evaluated in 120-nm SiGe heterojunction bipolar transistor (HBT) process. The SPDT switch IC employs diode-connected HBTs and LC resonant circuits to improve the insertion loss and isolation. The fabricated SPDT switch IC has exhibited an insertion loss of 3.3 dB, an isolation of 21.8 dB and an input-referred 1-dB compression point (P1dB) of 16 dBm at 32 GHz.

KW - 120-nm SiGe HBT

KW - 30 GHz

KW - Low-insertion loss

KW - SPDT switch IC

UR - http://www.scopus.com/inward/record.url?scp=84994744828&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84994744828&partnerID=8YFLogxK

U2 - 10.1109/RFIT.2016.7578134

DO - 10.1109/RFIT.2016.7578134

M3 - Conference contribution

BT - RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology

PB - Institute of Electrical and Electronics Engineers Inc.

ER -