An embedded DRAM macro with a self-adjustable timing control (STC) scheme, a negative edge transmission scheme (NET), and a power-down data retention (PDDR) mode is developed. A 13.98-mm2 16-Mb embedded DRAM macro is fabricated in 0.13 μm logic-based embedded DRAM process. Co-salicide word lines and MIM capacitors are used for high-speed array operation. The delay timing variation of 36% for an RC delay can be reduced to 3.8% by using the STC scheme. The NET scheme transfers array control signals to local array blocks with high accuracy. Thereby, the test chip achieves 1.2-V 312-MHz random cycle operation even in the low-power process. 73-μW data retention power is realized by using the PDDR mode, which is 5% of conventional schemes.
- CMOS memory integrated circuits
- Embedded DRAM
- Mobile applications
ASJC Scopus subject areas
- Electrical and Electronic Engineering