A 312-MHz 16-Mb random-cycle embedded DRAM macro with a power-down data retention mode for mobile applications

Fukashi Morishita*, Isamu Hayashi, Hideto Matsuoka, Kazuhiro Takahashi, Kuniyasu Shigeta, Takayuki Gyohten, Mitsutaka Niiro, Hideyuki Noda, Mako Okamoto, Atsushi Hachisuka, Atsushi Amo, Hiroki Shinkawata, Tatsuo Kasaoka, Katsumi Dosaka, Kazutami Arimoto, Kazuyasu Fujishima, Kenji Anami, Tsutomu Yoshihara

*Corresponding author for this work

    Research output: Contribution to journal › Article › peer-review

    14 Citations (Scopus)

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    Engineering & Materials Science