A 32×32 two-dimensional photodetector array using a-Si pin photodiodes and poly-Si TFTs integrated on a transparent substrate

M. Okamura, K. Kimura, S. Shirai, Noriyoshi Yamauchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have designed, fabricated, and characterized a 32×32 two-dimensional photodetector array using amorphous silicon (a-Si) pin photodiodes and polysilicon (poly-Si) TFTs integrated on a transparent substrate. This work demonstrates the feasibility of a light-transmitting two-dimensional photodetector array for use in parallel optoelectronic systems such as free-space photonic switching systems.

Original languageEnglish
Title of host publication1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages685-688
Number of pages4
ISBN (Electronic)0780308174
DOIs
Publication statusPublished - 1992 Jan 1
Event1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States
Duration: 1992 Dec 131992 Dec 16

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1992-December
ISSN (Print)0163-1918

Conference

Conference1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
CountryUnited States
CitySan Francisco
Period92/12/1392/12/16

Fingerprint

Photodetectors
Photodiodes
Amorphous silicon
Polysilicon
amorphous silicon
photodiodes
photometers
Switching systems
Substrates
optical switching
Optoelectronic devices
Photonics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Okamura, M., Kimura, K., Shirai, S., & Yamauchi, N. (1992). A 32×32 two-dimensional photodetector array using a-Si pin photodiodes and poly-Si TFTs integrated on a transparent substrate. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 (pp. 685-688). [307452] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1992.307452

A 32×32 two-dimensional photodetector array using a-Si pin photodiodes and poly-Si TFTs integrated on a transparent substrate. / Okamura, M.; Kimura, K.; Shirai, S.; Yamauchi, Noriyoshi.

1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc., 1992. p. 685-688 307452 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Okamura, M, Kimura, K, Shirai, S & Yamauchi, N 1992, A 32×32 two-dimensional photodetector array using a-Si pin photodiodes and poly-Si TFTs integrated on a transparent substrate. in 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992., 307452, Technical Digest - International Electron Devices Meeting, IEDM, vol. 1992-December, Institute of Electrical and Electronics Engineers Inc., pp. 685-688, 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992, San Francisco, United States, 92/12/13. https://doi.org/10.1109/IEDM.1992.307452
Okamura M, Kimura K, Shirai S, Yamauchi N. A 32×32 two-dimensional photodetector array using a-Si pin photodiodes and poly-Si TFTs integrated on a transparent substrate. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc. 1992. p. 685-688. 307452. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.1992.307452
Okamura, M. ; Kimura, K. ; Shirai, S. ; Yamauchi, Noriyoshi. / A 32×32 two-dimensional photodetector array using a-Si pin photodiodes and poly-Si TFTs integrated on a transparent substrate. 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc., 1992. pp. 685-688 (Technical Digest - International Electron Devices Meeting, IEDM).
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