A 373 F 2 2D Power-Gated EE SRAM Physically Unclonable Function with Dark-Bit Detection Technique

Kunyang Liu, Yue Min, Xuan Yang, Hanfeng Sun, Hirofumi Shinohara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents an Enhancement-Enhancement (EE) SRAM physically unclonable function (PUF) with a dark-bit detection technique based on an integrated Vss-bias generator. The EE SRAM PUF cell improves native stability to 0.21% bit-error rate (BER). Bit cells that are potentially unstable due to environmental variations or aging are detected via the lightweight bias generator to ensure stability, and the effectiveness is verified with experimental results of dark-bit detection performed at room temperature. Measurement results of 10 chips in 130-nm CMOS show that after masking the detected dark bits, 1.3×10 -6 BER is achieved across 0.8-1.4 V/-40-120 °C VT corners. The nMOS-only bit cell is also highly compact (i.e., 373 F 2 ). Moreover, a 2D power-gating scheme is implemented for low operation energy, low standby power, and high attack tolerance.

Original languageEnglish
Title of host publication2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages161-164
Number of pages4
ISBN (Electronic)9781538664124
DOIs
Publication statusPublished - 2018 Dec 14
Event2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Tainan, Taiwan, Province of China
Duration: 2018 Nov 52018 Nov 7

Publication series

Name2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings

Conference

Conference2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018
CountryTaiwan, Province of China
CityTainan
Period18/11/518/11/7

Keywords

  • dark-bit masking
  • EE SRAM
  • hardware security
  • IoT
  • physically unclonable function (PUF)

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Liu, K., Min, Y., Yang, X., Sun, H., & Shinohara, H. (2018). A 373 F 2 2D Power-Gated EE SRAM Physically Unclonable Function with Dark-Bit Detection Technique In 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings (pp. 161-164). [8579315] (2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASSCC.2018.8579315