A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe BiCMOS technology

Satoshi Kurachi, Yusuke Murata, Shohei Ishikawa, Nobuyuki Itoh, Koji Yonemura, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents an ultra-wideband voltage controlled oscillator (VCO) IC using 0.35 μm SiGe BiCMOS technology. The VCO IC exhibits an oscillation frequency from 2.67 to 4.37 GHz. To realize the wideband tuning range, a novel resonant circuit is proposed. The novel resonant circuit consists of three NMOS varactor pairs, p-n diodes, two spiral inductors and a control circuit which sequentially applies a control voltage to the NMOS varactor pairs and p-n diode pairs. The novel resonant circuit allows the VCO IC to have the wideband tuning range with a single analog control voltage. The dc current consumption of the VCO is 5.8 mA at a collector voltage of 4.0 V. The VCO has a phase noise of -111 dBc/Hz at 1 MHz offset at an oscillation frequnecy of 4.37 GHz.

Original languageEnglish
Title of host publicationProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Pages9-12
Number of pages4
DOIs
Publication statusPublished - 2007
Event2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM - Boston, MA
Duration: 2007 Sep 302007 Oct 2

Other

Other2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM
CityBoston, MA
Period07/9/3007/10/2

Fingerprint

BiCMOS technology
Variable frequency oscillators
Ultra-wideband (UWB)
Resonant circuits
Varactors
Voltage control
Diodes
Tuning
Phase noise
Networks (circuits)
Electric potential

Keywords

  • Resonant circuit
  • Silicon bipolar/BiCMOS process technology
  • VCO
  • Wide tuning range

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kurachi, S., Murata, Y., Ishikawa, S., Itoh, N., Yonemura, K., & Yoshimasu, T. (2007). A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe BiCMOS technology. In Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (pp. 9-12). [4351827] https://doi.org/10.1109/BIPOL.2007.4351827

A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe BiCMOS technology. / Kurachi, Satoshi; Murata, Yusuke; Ishikawa, Shohei; Itoh, Nobuyuki; Yonemura, Koji; Yoshimasu, Toshihiko.

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. 2007. p. 9-12 4351827.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kurachi, S, Murata, Y, Ishikawa, S, Itoh, N, Yonemura, K & Yoshimasu, T 2007, A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe BiCMOS technology. in Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting., 4351827, pp. 9-12, 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM, Boston, MA, 07/9/30. https://doi.org/10.1109/BIPOL.2007.4351827
Kurachi S, Murata Y, Ishikawa S, Itoh N, Yonemura K, Yoshimasu T. A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe BiCMOS technology. In Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. 2007. p. 9-12. 4351827 https://doi.org/10.1109/BIPOL.2007.4351827
Kurachi, Satoshi ; Murata, Yusuke ; Ishikawa, Shohei ; Itoh, Nobuyuki ; Yonemura, Koji ; Yoshimasu, Toshihiko. / A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe BiCMOS technology. Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. 2007. pp. 9-12
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abstract = "This paper presents an ultra-wideband voltage controlled oscillator (VCO) IC using 0.35 μm SiGe BiCMOS technology. The VCO IC exhibits an oscillation frequency from 2.67 to 4.37 GHz. To realize the wideband tuning range, a novel resonant circuit is proposed. The novel resonant circuit consists of three NMOS varactor pairs, p-n diodes, two spiral inductors and a control circuit which sequentially applies a control voltage to the NMOS varactor pairs and p-n diode pairs. The novel resonant circuit allows the VCO IC to have the wideband tuning range with a single analog control voltage. The dc current consumption of the VCO is 5.8 mA at a collector voltage of 4.0 V. The VCO has a phase noise of -111 dBc/Hz at 1 MHz offset at an oscillation frequnecy of 4.37 GHz.",
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