A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe BiCMOS technology

Satoshi Kurachi, Yusuke Murata, Shohei Ishikawa, Nobuyuki Itoh, Koji Yonemura, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents an ultra-wideband voltage controlled oscillator (VCO) IC using 0.35 μm SiGe BiCMOS technology. The VCO IC exhibits an oscillation frequency from 2.67 to 4.37 GHz. To realize the wideband tuning range, a novel resonant circuit is proposed. The novel resonant circuit consists of three NMOS varactor pairs, p-n diodes, two spiral inductors and a control circuit which sequentially applies a control voltage to the NMOS varactor pairs and p-n diode pairs. The novel resonant circuit allows the VCO IC to have the wideband tuning range with a single analog control voltage. The dc current consumption of the VCO is 5.8 mA at a collector voltage of 4.0 V. The VCO has a phase noise of -111 dBc/Hz at 1 MHz offset at an oscillation frequnecy of 4.37 GHz.

Original languageEnglish
Title of host publicationProceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Pages9-12
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
Event2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM - Boston, MA, United States
Duration: 2007 Sep 302007 Oct 2

Publication series

NameProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)1088-9299

Conference

Conference2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM
CountryUnited States
CityBoston, MA
Period07/9/3007/10/2

Keywords

  • Resonant circuit
  • Silicon bipolar/BiCMOS process technology
  • VCO
  • Wide tuning range

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Kurachi, S., Murata, Y., Ishikawa, S., Itoh, N., Yonemura, K., & Yoshimasu, T. (2007). A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe BiCMOS technology. In Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (pp. 9-12). [4351827] (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). https://doi.org/10.1109/BIPOL.2007.4351827