A 45-ns 64-Mb DRAM with a merged match-line test architecture

Shigeru Mori; Hiroshi Miyamoto; Yoshikazu Morooka; Shigeru Kikuda; Makoto Suwa; Mitsuya Kinoshita; Atsushi Hachisuka; Hideaki Arima; Michihiro Yamada; Tsutomu Yoshihara; Shimpei Kayano

doi:10.1109/4.98962

A 45-ns 64-Mb DRAM with a merged match-line test architecture

Shigeru Mori, Hiroshi Miyamoto, Yoshikazu Morooka, Shigeru Kikuda, Makoto Suwa, Mitsuya Kinoshita, Atsushi Hachisuka, Hideaki Arima, Michihiro Yamada, Tsutomu Yoshihara, Shimpei Kayano

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A single 3.3-V 64-Mb dynamic RAM (DRAM) with a chip size of 233.8 mm² has been fabricated using 0.4-μm CMOS technology with double-level metallization. The dual-cell-plate (DCP) cell structure is applied with a cell size of 1.7 μm², and 30-fF cell capacitance has been achieved using an oxynitride layer (t_eff = 5 nm) as the gate insulator. The RAM implements a new data-line architecture called the merged match-line test (MMT) to achieve faster access time and shorter test time with the least chip-area penalty. The MMT architecture makes it possible to get a RAS access time of 45 ns and reduces test time by 1/16000. A parallel MMT technique, which is an extended mode of MMT, leads to the further test-time reduction of 1/64000. Therefore, all 64 Mb are tested in only 1024 cycles, and the test time is only 150 μs with 150-ns cycle time.

Original language	English
Pages (from-to)	1486-1492
Number of pages	7
Journal	IEEE Journal of Solid-State Circuits
Volume	26
Issue number	11
DOIs	https://doi.org/10.1109/4.98962
Publication status	Published - 1991 Nov
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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A 45-ns 64-Mb DRAM with a merged match-line test architecture. / Mori, Shigeru; Miyamoto, Hiroshi; Morooka, Yoshikazu; Kikuda, Shigeru; Suwa, Makoto; Kinoshita, Mitsuya; Hachisuka, Atsushi; Arima, Hideaki; Yamada, Michihiro; Yoshihara, Tsutomu; Kayano, Shimpei.

In: IEEE Journal of Solid-State Circuits, Vol. 26, No. 11, 11.1991, p. 1486-1492.

Research output: Contribution to journal › Article › peer-review

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abstract = "A single 3.3-V 64-Mb dynamic RAM (DRAM) with a chip size of 233.8 mm2 has been fabricated using 0.4-μm CMOS technology with double-level metallization. The dual-cell-plate (DCP) cell structure is applied with a cell size of 1.7 μm2, and 30-fF cell capacitance has been achieved using an oxynitride layer (teff = 5 nm) as the gate insulator. The RAM implements a new data-line architecture called the merged match-line test (MMT) to achieve faster access time and shorter test time with the least chip-area penalty. The MMT architecture makes it possible to get a RAS access time of 45 ns and reduces test time by 1/16000. A parallel MMT technique, which is an extended mode of MMT, leads to the further test-time reduction of 1/64000. Therefore, all 64 Mb are tested in only 1024 cycles, and the test time is only 150 μs with 150-ns cycle time.",

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AU - Kinoshita, Mitsuya

AU - Hachisuka, Atsushi

AU - Arima, Hideaki

AU - Yamada, Michihiro

AU - Yoshihara, Tsutomu

AU - Kayano, Shimpei

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N2 - A single 3.3-V 64-Mb dynamic RAM (DRAM) with a chip size of 233.8 mm2 has been fabricated using 0.4-μm CMOS technology with double-level metallization. The dual-cell-plate (DCP) cell structure is applied with a cell size of 1.7 μm2, and 30-fF cell capacitance has been achieved using an oxynitride layer (teff = 5 nm) as the gate insulator. The RAM implements a new data-line architecture called the merged match-line test (MMT) to achieve faster access time and shorter test time with the least chip-area penalty. The MMT architecture makes it possible to get a RAS access time of 45 ns and reduces test time by 1/16000. A parallel MMT technique, which is an extended mode of MMT, leads to the further test-time reduction of 1/64000. Therefore, all 64 Mb are tested in only 1024 cycles, and the test time is only 150 μs with 150-ns cycle time.

AB - A single 3.3-V 64-Mb dynamic RAM (DRAM) with a chip size of 233.8 mm2 has been fabricated using 0.4-μm CMOS technology with double-level metallization. The dual-cell-plate (DCP) cell structure is applied with a cell size of 1.7 μm2, and 30-fF cell capacitance has been achieved using an oxynitride layer (teff = 5 nm) as the gate insulator. The RAM implements a new data-line architecture called the merged match-line test (MMT) to achieve faster access time and shorter test time with the least chip-area penalty. The MMT architecture makes it possible to get a RAS access time of 45 ns and reduces test time by 1/16000. A parallel MMT technique, which is an extended mode of MMT, leads to the further test-time reduction of 1/64000. Therefore, all 64 Mb are tested in only 1024 cycles, and the test time is only 150 μs with 150-ns cycle time.

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A 45-ns 64-Mb DRAM with a merged match-line test architecture

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