A 45nm 2port 8T-SRAM using hierarchical replica bitline technique with immunity from simultaneous RAV access issues

S. Ishikura, M. Kurumada, T. Terano, Y. Yamagami, N. Kotani, K. Satomi, K. Nii, M. Yabuuchi, Y. Tsukamoto, S. Ohbayashi, T. Oashi, H. Makino, Hirofumi Shinohara, H. Akamatsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

We propose a new 2port (2P) SRAM with an 8T single-bit-line (SBL) memory cell for 45nm SOCs. Access time tends to be slower as the device size is scaled down because of the random threshold-voltage variations. The Divided read Bit line scheme with Shared local Amplifier (DBSA) realizes fast access time without increasing area penalty. We also show an additional important issue of a simultaneous Read and Write (R/W) access at the same row by using DBSA with the 8T-SBL memory cell. A rise of the storage node voltage causes the misreading. The Read End detecting Replica circuit (RER) and the Local read bit line with Dummy Capacitance (LDC) are introduced to solve this issue. A 128BI-×512WL 64Kb 2P-SRAM macro which cell size is 0.597μm2 using these schemes was fabricated by 45nm LSTP CMOS process [1].

Original languageEnglish
Title of host publicationIEEE Symposium on VLSI Circuits, Digest of Technical Papers
Pages254-255
Number of pages2
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event2007 Symposium on VLSI Circuits, VLSIC - Kyoto, Japan
Duration: 2007 Jun 142007 Jun 16

Other

Other2007 Symposium on VLSI Circuits, VLSIC
CountryJapan
CityKyoto
Period07/6/1407/6/16

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ishikura, S., Kurumada, M., Terano, T., Yamagami, Y., Kotani, N., Satomi, K., Nii, K., Yabuuchi, M., Tsukamoto, Y., Ohbayashi, S., Oashi, T., Makino, H., Shinohara, H., & Akamatsu, H. (2007). A 45nm 2port 8T-SRAM using hierarchical replica bitline technique with immunity from simultaneous RAV access issues. In IEEE Symposium on VLSI Circuits, Digest of Technical Papers (pp. 254-255). [4342740] https://doi.org/10.1109/VLSIC.2007.4342740