A 5-GHz band WLAN SiGe HBT power amplifier IC with novel adaptive-linearizing CMOS bias circuit

Xin Yang, Tsuyoshi Sugiura, Norihisa Otani, Tadamasa Murakami, Eiichiro Otobe, Toshihiko Yoshimasu

Research output: Contribution to journalArticle

1 Citation (Scopus)


This paper presents a novel CMOS bias topology serving as not only a bias circuit but also an adaptive linearizer for SiGe HBT power amplifier (PA) IC. The novel bias circuit can well keep the base-to-emitter voltage (V<inf>be</inf>) of RF amplifying HBT constant and adaptively increase the base current (I<inf>b</inf>) with the increase of the input power. Therefore, the gain compression and phase distortion performance of the PA is improved. A three-stage 5-GHz band PA IC with the novel bias circuit for WLAN applications is designed and fabricated in IBM 0.35 μm SiGe BiCMOS technology. Under 54 Mbps OFDM signal at 5.4 GHz, the PA IC exhibits a measured small-signal gain of 29 dB, an EVM of 0.9% at 17 dBm output power and a DC current consumption of 284 mA.

Original languageEnglish
Pages (from-to)651-658
Number of pages8
JournalIEICE Transactions on Electronics
Issue number7
Publication statusPublished - 2015 Jul 1
Externally publishedYes



  • 0.35 μm sige bicmos
  • Adaptive-linearizing bias
  • EVM
  • Linear power amplifier
  • WLAN

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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