TY - JOUR
T1 - A 5-GHz band WLAN SiGe HBT power amplifier IC with novel adaptive-linearizing CMOS bias circuit
AU - Yang, Xin
AU - Sugiura, Tsuyoshi
AU - Otani, Norihisa
AU - Murakami, Tadamasa
AU - Otobe, Eiichiro
AU - Yoshimasu, Toshihiko
N1 - Publisher Copyright:
Copyright © 2015 The Institute of Electronics, Information and Communication Engineers. All rights reserved.
PY - 2015/7/1
Y1 - 2015/7/1
N2 - This paper presents a novel CMOS bias topology serving as not only a bias circuit but also an adaptive linearizer for SiGe HBT power amplifier (PA) IC. The novel bias circuit can well keep the base-to-emitter voltage (Vbe) of RF amplifying HBT constant and adaptively increase the base current (Ib) with the increase of the input power. Therefore, the gain compression and phase distortion performance of the PA is improved. A three-stage 5-GHz band PA IC with the novel bias circuit for WLAN applications is designed and fabricated in IBM 0.35 μm SiGe BiCMOS technology. Under 54 Mbps OFDM signal at 5.4 GHz, the PA IC exhibits a measured small-signal gain of 29 dB, an EVM of 0.9% at 17 dBm output power and a DC current consumption of 284 mA.
AB - This paper presents a novel CMOS bias topology serving as not only a bias circuit but also an adaptive linearizer for SiGe HBT power amplifier (PA) IC. The novel bias circuit can well keep the base-to-emitter voltage (Vbe) of RF amplifying HBT constant and adaptively increase the base current (Ib) with the increase of the input power. Therefore, the gain compression and phase distortion performance of the PA is improved. A three-stage 5-GHz band PA IC with the novel bias circuit for WLAN applications is designed and fabricated in IBM 0.35 μm SiGe BiCMOS technology. Under 54 Mbps OFDM signal at 5.4 GHz, the PA IC exhibits a measured small-signal gain of 29 dB, an EVM of 0.9% at 17 dBm output power and a DC current consumption of 284 mA.
KW - 0.35 μm sige bicmos
KW - Adaptive-linearizing bias
KW - EVM
KW - Linear power amplifier
KW - WLAN
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U2 - 10.1587/transele.E98.C.651
DO - 10.1587/transele.E98.C.651
M3 - Article
AN - SCOPUS:84934767935
SN - 0916-8524
VL - E98C
SP - 651
EP - 658
JO - IEICE Transactions on Electronics
JF - IEICE Transactions on Electronics
IS - 7
ER -