A 5.5-GHZ sige HBT Doherty amplifier using diode linearizer and lumped-element hybrid coupler

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A 5.5-GHz Doherty amplifier using commercial 0.35-μm SiGe HBT technology is proposed in this article. To improve the linearity, a predistortion using diode linearizer is adopted for biasing the peak amplifier. Moreover, to realize in fully on-chip with circuit reduction, a 90° 3-dB hybrid coupler and quarter-wave transmission lines are implemented by lumped-elements. In this design, 819 μm2 HBTs are used for carried and peak amplifiers, respectively, and 26 μm2 HBT is used for linearizer. Results verify that the power gain, P1dB, and power added efficiency (PAE) of the proposed Doherty amplifier at 5.5 GHz are 8.4 dB, 31 dBm, and 30%, respectively. Also, the adjacent channel power ratio (ACPR) and the output signal's spectrum mask are given using the 54Mcps 64QAM modulated signal at 10 MHz offset.

Original languageEnglish
Pages (from-to)1554-1558
Number of pages5
JournalMicrowave and Optical Technology Letters
Volume50
Issue number6
DOIs
Publication statusPublished - 2008 Jun

Fingerprint

Doherty amplifiers
Heterojunction bipolar transistors
couplers
Diodes
amplifiers
diodes
Wave transmission
power gain
Masks
Electric lines
power efficiency
transmission lines
linearity
masks
Networks (circuits)
chips
output

Keywords

  • Diode linearizer
  • Doherty amplifier
  • Lumped-element coupler
  • SiGe HBT

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

A 5.5-GHZ sige HBT Doherty amplifier using diode linearizer and lumped-element hybrid coupler. / Liu, Haiwen; Yoshimasu, Toshihiko.

In: Microwave and Optical Technology Letters, Vol. 50, No. 6, 06.2008, p. 1554-1558.

Research output: Contribution to journalArticle

@article{979a8fb98f0b499aafb113a381ed146d,
title = "A 5.5-GHZ sige HBT Doherty amplifier using diode linearizer and lumped-element hybrid coupler",
abstract = "A 5.5-GHz Doherty amplifier using commercial 0.35-μm SiGe HBT technology is proposed in this article. To improve the linearity, a predistortion using diode linearizer is adopted for biasing the peak amplifier. Moreover, to realize in fully on-chip with circuit reduction, a 90° 3-dB hybrid coupler and quarter-wave transmission lines are implemented by lumped-elements. In this design, 819 μm2 HBTs are used for carried and peak amplifiers, respectively, and 26 μm2 HBT is used for linearizer. Results verify that the power gain, P1dB, and power added efficiency (PAE) of the proposed Doherty amplifier at 5.5 GHz are 8.4 dB, 31 dBm, and 30{\%}, respectively. Also, the adjacent channel power ratio (ACPR) and the output signal's spectrum mask are given using the 54Mcps 64QAM modulated signal at 10 MHz offset.",
keywords = "Diode linearizer, Doherty amplifier, Lumped-element coupler, SiGe HBT",
author = "Haiwen Liu and Toshihiko Yoshimasu",
year = "2008",
month = "6",
doi = "10.1002/mop.23432",
language = "English",
volume = "50",
pages = "1554--1558",
journal = "Microwave and Optical Technology Letters",
issn = "0895-2477",
publisher = "John Wiley and Sons Inc.",
number = "6",

}

TY - JOUR

T1 - A 5.5-GHZ sige HBT Doherty amplifier using diode linearizer and lumped-element hybrid coupler

AU - Liu, Haiwen

AU - Yoshimasu, Toshihiko

PY - 2008/6

Y1 - 2008/6

N2 - A 5.5-GHz Doherty amplifier using commercial 0.35-μm SiGe HBT technology is proposed in this article. To improve the linearity, a predistortion using diode linearizer is adopted for biasing the peak amplifier. Moreover, to realize in fully on-chip with circuit reduction, a 90° 3-dB hybrid coupler and quarter-wave transmission lines are implemented by lumped-elements. In this design, 819 μm2 HBTs are used for carried and peak amplifiers, respectively, and 26 μm2 HBT is used for linearizer. Results verify that the power gain, P1dB, and power added efficiency (PAE) of the proposed Doherty amplifier at 5.5 GHz are 8.4 dB, 31 dBm, and 30%, respectively. Also, the adjacent channel power ratio (ACPR) and the output signal's spectrum mask are given using the 54Mcps 64QAM modulated signal at 10 MHz offset.

AB - A 5.5-GHz Doherty amplifier using commercial 0.35-μm SiGe HBT technology is proposed in this article. To improve the linearity, a predistortion using diode linearizer is adopted for biasing the peak amplifier. Moreover, to realize in fully on-chip with circuit reduction, a 90° 3-dB hybrid coupler and quarter-wave transmission lines are implemented by lumped-elements. In this design, 819 μm2 HBTs are used for carried and peak amplifiers, respectively, and 26 μm2 HBT is used for linearizer. Results verify that the power gain, P1dB, and power added efficiency (PAE) of the proposed Doherty amplifier at 5.5 GHz are 8.4 dB, 31 dBm, and 30%, respectively. Also, the adjacent channel power ratio (ACPR) and the output signal's spectrum mask are given using the 54Mcps 64QAM modulated signal at 10 MHz offset.

KW - Diode linearizer

KW - Doherty amplifier

KW - Lumped-element coupler

KW - SiGe HBT

UR - http://www.scopus.com/inward/record.url?scp=43049114610&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43049114610&partnerID=8YFLogxK

U2 - 10.1002/mop.23432

DO - 10.1002/mop.23432

M3 - Article

AN - SCOPUS:43049114610

VL - 50

SP - 1554

EP - 1558

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

SN - 0895-2477

IS - 6

ER -