A 75MHz MRAM with pipe-lined self-reference read scheme for mobile/robotics memory system

Tae Yun Kim, Fuminori Kimura, Yusuke Matsui, Tsutomu Yoshihara, Tsukasa Ooishi, Yuji Kihara, Masahiro Hatanaka

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    In this paper, we propose a pipe-lined self-reference read scheme of M RAM with read modify write which can make an operation period short. It also brings continuous read out accompanied with a mixed mat architecture. A new self-reference sense amplifier supported by a voltage transferred circuit has a wide margin. It Is able to tolerate 50% MTJ resistance variation for sensing operation, and makes 75MHz operation at 1.2V Vcc possible. It brings a robust memory module for embedded memory system and suits mobile/robotics synchronous memory system.

    Original languageEnglish
    Title of host publication2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005
    Pages117-120
    Number of pages4
    DOIs
    Publication statusPublished - 2006
    Event1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005 - Hsinchu
    Duration: 2005 Nov 12005 Nov 3

    Other

    Other1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005
    CityHsinchu
    Period05/11/105/11/3

    Fingerprint

    Robotics
    Pipe
    Data storage equipment
    Computer systems
    Random access storage
    Networks (circuits)
    Electric potential

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

    Cite this

    Kim, T. Y., Kimura, F., Matsui, Y., Yoshihara, T., Ooishi, T., Kihara, Y., & Hatanaka, M. (2006). A 75MHz MRAM with pipe-lined self-reference read scheme for mobile/robotics memory system. In 2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005 (pp. 117-120). [4017545] https://doi.org/10.1109/ASSCC.2005.251679

    A 75MHz MRAM with pipe-lined self-reference read scheme for mobile/robotics memory system. / Kim, Tae Yun; Kimura, Fuminori; Matsui, Yusuke; Yoshihara, Tsutomu; Ooishi, Tsukasa; Kihara, Yuji; Hatanaka, Masahiro.

    2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005. 2006. p. 117-120 4017545.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Kim, TY, Kimura, F, Matsui, Y, Yoshihara, T, Ooishi, T, Kihara, Y & Hatanaka, M 2006, A 75MHz MRAM with pipe-lined self-reference read scheme for mobile/robotics memory system. in 2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005., 4017545, pp. 117-120, 1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005, Hsinchu, 05/11/1. https://doi.org/10.1109/ASSCC.2005.251679
    Kim TY, Kimura F, Matsui Y, Yoshihara T, Ooishi T, Kihara Y et al. A 75MHz MRAM with pipe-lined self-reference read scheme for mobile/robotics memory system. In 2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005. 2006. p. 117-120. 4017545 https://doi.org/10.1109/ASSCC.2005.251679
    Kim, Tae Yun ; Kimura, Fuminori ; Matsui, Yusuke ; Yoshihara, Tsutomu ; Ooishi, Tsukasa ; Kihara, Yuji ; Hatanaka, Masahiro. / A 75MHz MRAM with pipe-lined self-reference read scheme for mobile/robotics memory system. 2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005. 2006. pp. 117-120
    @inproceedings{cf3695a3f36d4ed6bee34f3c0947af0c,
    title = "A 75MHz MRAM with pipe-lined self-reference read scheme for mobile/robotics memory system",
    abstract = "In this paper, we propose a pipe-lined self-reference read scheme of M RAM with read modify write which can make an operation period short. It also brings continuous read out accompanied with a mixed mat architecture. A new self-reference sense amplifier supported by a voltage transferred circuit has a wide margin. It Is able to tolerate 50{\%} MTJ resistance variation for sensing operation, and makes 75MHz operation at 1.2V Vcc possible. It brings a robust memory module for embedded memory system and suits mobile/robotics synchronous memory system.",
    author = "Kim, {Tae Yun} and Fuminori Kimura and Yusuke Matsui and Tsutomu Yoshihara and Tsukasa Ooishi and Yuji Kihara and Masahiro Hatanaka",
    year = "2006",
    doi = "10.1109/ASSCC.2005.251679",
    language = "English",
    isbn = "0780391624",
    pages = "117--120",
    booktitle = "2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005",

    }

    TY - GEN

    T1 - A 75MHz MRAM with pipe-lined self-reference read scheme for mobile/robotics memory system

    AU - Kim, Tae Yun

    AU - Kimura, Fuminori

    AU - Matsui, Yusuke

    AU - Yoshihara, Tsutomu

    AU - Ooishi, Tsukasa

    AU - Kihara, Yuji

    AU - Hatanaka, Masahiro

    PY - 2006

    Y1 - 2006

    N2 - In this paper, we propose a pipe-lined self-reference read scheme of M RAM with read modify write which can make an operation period short. It also brings continuous read out accompanied with a mixed mat architecture. A new self-reference sense amplifier supported by a voltage transferred circuit has a wide margin. It Is able to tolerate 50% MTJ resistance variation for sensing operation, and makes 75MHz operation at 1.2V Vcc possible. It brings a robust memory module for embedded memory system and suits mobile/robotics synchronous memory system.

    AB - In this paper, we propose a pipe-lined self-reference read scheme of M RAM with read modify write which can make an operation period short. It also brings continuous read out accompanied with a mixed mat architecture. A new self-reference sense amplifier supported by a voltage transferred circuit has a wide margin. It Is able to tolerate 50% MTJ resistance variation for sensing operation, and makes 75MHz operation at 1.2V Vcc possible. It brings a robust memory module for embedded memory system and suits mobile/robotics synchronous memory system.

    UR - http://www.scopus.com/inward/record.url?scp=34250747376&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=34250747376&partnerID=8YFLogxK

    U2 - 10.1109/ASSCC.2005.251679

    DO - 10.1109/ASSCC.2005.251679

    M3 - Conference contribution

    AN - SCOPUS:34250747376

    SN - 0780391624

    SN - 9780780391628

    SP - 117

    EP - 120

    BT - 2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005

    ER -