A 75MHz MRAM with pipe-lined self-reference read scheme for mobile/robotics memory system

Tae Yun Kim; Fuminori Kimura; Yusuke Matsui; Tsutomu Yoshihara; Tsukasa Ooishi; Yuji Kihara; Masahiro Hatanaka

doi:10.1109/ASSCC.2005.251679

A 75MHz MRAM with pipe-lined self-reference read scheme for mobile/robotics memory system

Tae Yun Kim^*, Fuminori Kimura, Yusuke Matsui, Tsutomu Yoshihara, Tsukasa Ooishi, Yuji Kihara, Masahiro Hatanaka

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

In this paper, we propose a pipe-lined self-reference read scheme of M RAM with read modify write which can make an operation period short. It also brings continuous read out accompanied with a mixed mat architecture. A new self-reference sense amplifier supported by a voltage transferred circuit has a wide margin. It Is able to tolerate 50% MTJ resistance variation for sensing operation, and makes 75MHz operation at 1.2V Vcc possible. It brings a robust memory module for embedded memory system and suits mobile/robotics synchronous memory system.

Original language	English
Title of host publication	2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005
Pages	117-120
Number of pages	4
DOIs	https://doi.org/10.1109/ASSCC.2005.251679
Publication status	Published - 2006
Event	1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005 - Hsinchu Duration: 2005 Nov 1 → 2005 Nov 3

Other

Other	1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005
City	Hsinchu
Period	05/11/1 → 05/11/3

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ASSCC.2005.251679

Cite this

Kim, TY, Kimura, F, Matsui, Y, Yoshihara, T, Ooishi, T, Kihara, Y & Hatanaka, M 2006, A 75MHz MRAM with pipe-lined self-reference read scheme for mobile/robotics memory system. in 2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005., 4017545, pp. 117-120, 1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005, Hsinchu, 05/11/1. https://doi.org/10.1109/ASSCC.2005.251679

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abstract = "In this paper, we propose a pipe-lined self-reference read scheme of M RAM with read modify write which can make an operation period short. It also brings continuous read out accompanied with a mixed mat architecture. A new self-reference sense amplifier supported by a voltage transferred circuit has a wide margin. It Is able to tolerate 50% MTJ resistance variation for sensing operation, and makes 75MHz operation at 1.2V Vcc possible. It brings a robust memory module for embedded memory system and suits mobile/robotics synchronous memory system.",

author = "Kim, {Tae Yun} and Fuminori Kimura and Yusuke Matsui and Tsutomu Yoshihara and Tsukasa Ooishi and Yuji Kihara and Masahiro Hatanaka",

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AU - Kim, Tae Yun

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AU - Ooishi, Tsukasa

AU - Kihara, Yuji

AU - Hatanaka, Masahiro

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Y1 - 2006

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AB - In this paper, we propose a pipe-lined self-reference read scheme of M RAM with read modify write which can make an operation period short. It also brings continuous read out accompanied with a mixed mat architecture. A new self-reference sense amplifier supported by a voltage transferred circuit has a wide margin. It Is able to tolerate 50% MTJ resistance variation for sensing operation, and makes 75MHz operation at 1.2V Vcc possible. It brings a robust memory module for embedded memory system and suits mobile/robotics synchronous memory system.

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BT - 2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005

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A 75MHz MRAM with pipe-lined self-reference read scheme for mobile/robotics memory system

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