A 75MHz MRAM with pipe-lined self-reference read scheme for mobile/robotics memory system

Tae Yun Kim, Fuminori Kimura, Yusuke Matsui, Tsutomu Yoshihara, Tsukasa Ooishi, Yuji Kihara, Masahiro Hatanaka

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    In this paper, we propose a pipe-lined self-reference read scheme of M RAM with read modify write which can make an operation period short. It also brings continuous read out accompanied with a mixed mat architecture. A new self-reference sense amplifier supported by a voltage transferred circuit has a wide margin. It Is able to tolerate 50% MTJ resistance variation for sensing operation, and makes 75MHz operation at 1.2V Vcc possible. It brings a robust memory module for embedded memory system and suits mobile/robotics synchronous memory system.

    Original languageEnglish
    Title of host publication2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005
    Pages117-120
    Number of pages4
    DOIs
    Publication statusPublished - 2006
    Event1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005 - Hsinchu
    Duration: 2005 Nov 12005 Nov 3

    Other

    Other1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005
    CityHsinchu
    Period05/11/105/11/3

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

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  • Cite this

    Kim, T. Y., Kimura, F., Matsui, Y., Yoshihara, T., Ooishi, T., Kihara, Y., & Hatanaka, M. (2006). A 75MHz MRAM with pipe-lined self-reference read scheme for mobile/robotics memory system. In 2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005 (pp. 117-120). [4017545] https://doi.org/10.1109/ASSCC.2005.251679