A bulk-current model for advanced MOSFET technologies without binning: Substrate current and Fowler-Nordheim current

Ryosuke Inagaki, Norio Sadachika, Dondee Navarro, Mitiko Miura-Mattausch, Yasuaki Inoue

    Research output: Contribution to journalArticle

    Abstract

    A bulk-current model for advanced metal oxide semiconductor field effect transistors (MOSFETs) is proposed and implemented. The model consists of an impact ionization mechanism, the drain to bulk current and a tunneling mechanism, the gate to bulk current, and requires totally 21 model parameters covering all bias conditions. The simulated results with the parameter values reproduce measurements for any device size without binning. Validity of the model has been tested with circuits, which are sensitive to the change of the stored charge due to impact ionization current and tunneling current.

    Original languageEnglish
    Pages (from-to)96-104
    Number of pages9
    JournalIEEJ Transactions on Electrical and Electronic Engineering
    Volume5
    Issue number1
    DOIs
    Publication statusPublished - 2010 Jan

    Keywords

    • Bulk current
    • Surface potential
    • Without binning

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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