A bulk-current model for advanced MOSFET technologies without binning: Substrate current and Fowler-Nordheim current

Ryosuke Inagaki; Norio Sadachika; Dondee Navarro; Mitiko Miura-Mattausch; Yasuaki Inoue

doi:10.1002/tee.20499

A bulk-current model for advanced MOSFET technologies without binning: Substrate current and Fowler-Nordheim current

Ryosuke Inagaki^*, Norio Sadachika, Dondee Navarro, Mitiko Miura-Mattausch, Yasuaki Inoue

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

A bulk-current model for advanced metal oxide semiconductor field effect transistors (MOSFETs) is proposed and implemented. The model consists of an impact ionization mechanism, the drain to bulk current and a tunneling mechanism, the gate to bulk current, and requires totally 21 model parameters covering all bias conditions. The simulated results with the parameter values reproduce measurements for any device size without binning. Validity of the model has been tested with circuits, which are sensitive to the change of the stored charge due to impact ionization current and tunneling current.

Original language	English
Pages (from-to)	96-104
Number of pages	9
Journal	IEEJ Transactions on Electrical and Electronic Engineering
Volume	5
Issue number	1
DOIs	https://doi.org/10.1002/tee.20499
Publication status	Published - 2010 Jan

Keywords

Bulk current
Surface potential
Without binning

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1002/tee.20499

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@article{1c3958cc24f54df1a53da3251bb86c4d,

title = "A bulk-current model for advanced MOSFET technologies without binning: Substrate current and Fowler-Nordheim current",

abstract = "A bulk-current model for advanced metal oxide semiconductor field effect transistors (MOSFETs) is proposed and implemented. The model consists of an impact ionization mechanism, the drain to bulk current and a tunneling mechanism, the gate to bulk current, and requires totally 21 model parameters covering all bias conditions. The simulated results with the parameter values reproduce measurements for any device size without binning. Validity of the model has been tested with circuits, which are sensitive to the change of the stored charge due to impact ionization current and tunneling current.",

keywords = "Bulk current, Surface potential, Without binning",

author = "Ryosuke Inagaki and Norio Sadachika and Dondee Navarro and Mitiko Miura-Mattausch and Yasuaki Inoue",

year = "2010",

month = jan,

doi = "10.1002/tee.20499",

language = "English",

volume = "5",

pages = "96--104",

journal = "IEEJ Transactions on Electrical and Electronic Engineering",

issn = "1931-4973",

publisher = "John Wiley and Sons Inc.",

number = "1",

}

TY - JOUR

T1 - A bulk-current model for advanced MOSFET technologies without binning

T2 - Substrate current and Fowler-Nordheim current

AU - Inagaki, Ryosuke

AU - Sadachika, Norio

AU - Navarro, Dondee

AU - Miura-Mattausch, Mitiko

AU - Inoue, Yasuaki

PY - 2010/1

Y1 - 2010/1

N2 - A bulk-current model for advanced metal oxide semiconductor field effect transistors (MOSFETs) is proposed and implemented. The model consists of an impact ionization mechanism, the drain to bulk current and a tunneling mechanism, the gate to bulk current, and requires totally 21 model parameters covering all bias conditions. The simulated results with the parameter values reproduce measurements for any device size without binning. Validity of the model has been tested with circuits, which are sensitive to the change of the stored charge due to impact ionization current and tunneling current.

AB - A bulk-current model for advanced metal oxide semiconductor field effect transistors (MOSFETs) is proposed and implemented. The model consists of an impact ionization mechanism, the drain to bulk current and a tunneling mechanism, the gate to bulk current, and requires totally 21 model parameters covering all bias conditions. The simulated results with the parameter values reproduce measurements for any device size without binning. Validity of the model has been tested with circuits, which are sensitive to the change of the stored charge due to impact ionization current and tunneling current.

KW - Bulk current

KW - Surface potential

KW - Without binning

UR - http://www.scopus.com/inward/record.url?scp=77952017505&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952017505&partnerID=8YFLogxK

U2 - 10.1002/tee.20499

DO - 10.1002/tee.20499

M3 - Article

AN - SCOPUS:77952017505

SN - 1931-4973

VL - 5

SP - 96

EP - 104

JO - IEEJ Transactions on Electrical and Electronic Engineering

JF - IEEJ Transactions on Electrical and Electronic Engineering

IS - 1

ER -

A bulk-current model for advanced MOSFET technologies without binning: Substrate current and Fowler-Nordheim current

Abstract

Keywords

ASJC Scopus subject areas

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