Abstract
A novel T/R switching circuit is proposed for microwave T/R modules. It consists of balanced high-power amplifiers with quadrature couplers, and a low-noise amplifier which is connected to the isolation port of the coupler. In RX-mode, the HPAs are switched off by controlling drain voltage of FETs. A prototype C- to Ku-band T/R switching circuit has been fabricated, and the validity of our switching method has been confirmed experimentally.
Original language | English |
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Pages (from-to) | 1349-1352 |
Number of pages | 4 |
Journal | IEEE MTT-S International Microwave Symposium Digest |
Volume | 2 |
Publication status | Published - 2001 |
Externally published | Yes |
Event | International Microwave Symposium Digest IEEE-MTT-S 2001 - Phoenix, AZ, United States Duration: 2001 May 20 → 2001 May 25 |
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering