A comparison study: Direct wafer bonding of SiC-SiC by standard surface-activated bonding and modified surface-activated bonding with Si-containing Ar ion beam

Fengwen Mu, Kenichi Iguchi, Haruo Nakazawa, Yoshikazu Takahashi, Masahisa Fujino, Ran He, Tadatomo Suga

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)

Fingerprint

Dive into the research topics of 'A comparison study: Direct wafer bonding of SiC-SiC by standard surface-activated bonding and modified surface-activated bonding with Si-containing Ar ion beam'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy