A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC

X. D. Chen, S. Fung, C. D. Beling, M. Gong, T. Henkel, H. Tanoue, Naoto Kobayashi

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Beryllium implantation induced defects in 6H-SiC pn junctions have been investigated by deep level transient spectroscopy. Five defect centers labeled BE1, BE2, BE3, BE4, and BE5 have been detected in the temperature range 100-450 K. A comparative study has also been performed in low beryllium doped n-type 6H-SiC, which proved that the BE1, BE2, and BE3 centers are electron traps located at 0.34, 0.44, and 0.53 eV, respectively, below the conduction band edge. On the other hand, the BE4 and BE5 centers have been found to be hole traps which are situated at 0.64 and 0.73 eV, respectively, above the valence band edge. Possible defect configurations associated with these deep levels are discussed.

Original languageEnglish
Pages (from-to)4558-4562
Number of pages5
JournalJournal of Applied Physics
Volume88
Issue number8
Publication statusPublished - 2000 Oct
Externally publishedYes

Fingerprint

beryllium
defects
traps
spectroscopy
implantation
conduction bands
valence
configurations
electrons
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Chen, X. D., Fung, S., Beling, C. D., Gong, M., Henkel, T., Tanoue, H., & Kobayashi, N. (2000). A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC. Journal of Applied Physics, 88(8), 4558-4562.

A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC. / Chen, X. D.; Fung, S.; Beling, C. D.; Gong, M.; Henkel, T.; Tanoue, H.; Kobayashi, Naoto.

In: Journal of Applied Physics, Vol. 88, No. 8, 10.2000, p. 4558-4562.

Research output: Contribution to journalArticle

Chen, XD, Fung, S, Beling, CD, Gong, M, Henkel, T, Tanoue, H & Kobayashi, N 2000, 'A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC', Journal of Applied Physics, vol. 88, no. 8, pp. 4558-4562.
Chen XD, Fung S, Beling CD, Gong M, Henkel T, Tanoue H et al. A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC. Journal of Applied Physics. 2000 Oct;88(8):4558-4562.
Chen, X. D. ; Fung, S. ; Beling, C. D. ; Gong, M. ; Henkel, T. ; Tanoue, H. ; Kobayashi, Naoto. / A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC. In: Journal of Applied Physics. 2000 ; Vol. 88, No. 8. pp. 4558-4562.
@article{e06f9e72ee004be680e5c38362907857,
title = "A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC",
abstract = "Beryllium implantation induced defects in 6H-SiC pn junctions have been investigated by deep level transient spectroscopy. Five defect centers labeled BE1, BE2, BE3, BE4, and BE5 have been detected in the temperature range 100-450 K. A comparative study has also been performed in low beryllium doped n-type 6H-SiC, which proved that the BE1, BE2, and BE3 centers are electron traps located at 0.34, 0.44, and 0.53 eV, respectively, below the conduction band edge. On the other hand, the BE4 and BE5 centers have been found to be hole traps which are situated at 0.64 and 0.73 eV, respectively, above the valence band edge. Possible defect configurations associated with these deep levels are discussed.",
author = "Chen, {X. D.} and S. Fung and Beling, {C. D.} and M. Gong and T. Henkel and H. Tanoue and Naoto Kobayashi",
year = "2000",
month = "10",
language = "English",
volume = "88",
pages = "4558--4562",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC

AU - Chen, X. D.

AU - Fung, S.

AU - Beling, C. D.

AU - Gong, M.

AU - Henkel, T.

AU - Tanoue, H.

AU - Kobayashi, Naoto

PY - 2000/10

Y1 - 2000/10

N2 - Beryllium implantation induced defects in 6H-SiC pn junctions have been investigated by deep level transient spectroscopy. Five defect centers labeled BE1, BE2, BE3, BE4, and BE5 have been detected in the temperature range 100-450 K. A comparative study has also been performed in low beryllium doped n-type 6H-SiC, which proved that the BE1, BE2, and BE3 centers are electron traps located at 0.34, 0.44, and 0.53 eV, respectively, below the conduction band edge. On the other hand, the BE4 and BE5 centers have been found to be hole traps which are situated at 0.64 and 0.73 eV, respectively, above the valence band edge. Possible defect configurations associated with these deep levels are discussed.

AB - Beryllium implantation induced defects in 6H-SiC pn junctions have been investigated by deep level transient spectroscopy. Five defect centers labeled BE1, BE2, BE3, BE4, and BE5 have been detected in the temperature range 100-450 K. A comparative study has also been performed in low beryllium doped n-type 6H-SiC, which proved that the BE1, BE2, and BE3 centers are electron traps located at 0.34, 0.44, and 0.53 eV, respectively, below the conduction band edge. On the other hand, the BE4 and BE5 centers have been found to be hole traps which are situated at 0.64 and 0.73 eV, respectively, above the valence band edge. Possible defect configurations associated with these deep levels are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0001142196&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001142196&partnerID=8YFLogxK

M3 - Article

VL - 88

SP - 4558

EP - 4562

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

ER -