A few-electron vertical In0.56Ga0.44As quantum dot with an insulating gate

Tomohiro Kita, D. Chiba, Y. Ohno, H. Ohno

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Using an Al2 O3 gate insulator by atomic layer deposition and air-bridge drain electrode, we fabricated a quantum dot with few electrons based on an In0.56 Ga0.44 As resonant tunneling diode structure. Artificial atomic properties manifested themselves in magnetotransport, enabling the determination of effective electron g factors. Results show that the insulating gate structure used here is effective for realizing quantum dots made of narrow-gap semiconductors for studying spin-related phenomena.

Original languageEnglish
Article number232101
JournalApplied Physics Letters
Volume91
Issue number23
DOIs
Publication statusPublished - 2007 Dec 14
Externally publishedYes

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quantum dots
resonant tunneling diodes
atomic layer epitaxy
electrons
insulators
electrodes
air

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

A few-electron vertical In0.56Ga0.44As quantum dot with an insulating gate. / Kita, Tomohiro; Chiba, D.; Ohno, Y.; Ohno, H.

In: Applied Physics Letters, Vol. 91, No. 23, 232101, 14.12.2007.

Research output: Contribution to journalArticle

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