A few-electron vertical In0.56Ga0.44As quantum dot with an insulating gate

T. Kita, D. Chiba, Y. Ohno, H. Ohno

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Using an Al2 O3 gate insulator by atomic layer deposition and air-bridge drain electrode, we fabricated a quantum dot with few electrons based on an In0.56 Ga0.44 As resonant tunneling diode structure. Artificial atomic properties manifested themselves in magnetotransport, enabling the determination of effective electron g factors. Results show that the insulating gate structure used here is effective for realizing quantum dots made of narrow-gap semiconductors for studying spin-related phenomena.

Original languageEnglish
Article number232101
JournalApplied Physics Letters
Issue number23
Publication statusPublished - 2007 Dec 14


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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