A few-electron vertical In0.56Ga0.44As quantum dot with an insulating gate

T. Kita, D. Chiba, Y. Ohno, H. Ohno

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Using an Al2 O3 gate insulator by atomic layer deposition and air-bridge drain electrode, we fabricated a quantum dot with few electrons based on an In0.56 Ga0.44 As resonant tunneling diode structure. Artificial atomic properties manifested themselves in magnetotransport, enabling the determination of effective electron g factors. Results show that the insulating gate structure used here is effective for realizing quantum dots made of narrow-gap semiconductors for studying spin-related phenomena.

Original languageEnglish
Article number232101
JournalApplied Physics Letters
Issue number23
Publication statusPublished - 2007 Dec 14
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'A few-electron vertical In<sub>0.56</sub>Ga<sub>0.44</sub>As quantum dot with an insulating gate'. Together they form a unique fingerprint.

Cite this