A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology(CMOS IV) for 128Mb SOI DRAM

Yoshihiro Minami, Tomoaki Shino, Atsushi Sakamoto, Tomoki Higashi, Naoki Kusunoki, Katsuyuki Fujita, Kosuke Hatsuda, Takashi Ohsawa, Nobutoshi Aoki, Hiroyoshi Tanimoto, Mutsuo Morikado, Hiroomi Nakajima, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

A 128Mb SOI DRAM with FBC (Floating Body Cell) has been successfully developed for the first time. Two technologies have been newly implemented. (i)In order to realize full functionality and good retention characteristics, the well design has been optimized both for the array device and the peripheral circuit. (ii)Cu wiring has been used for Bit Line(BL) and Source Line(SL), which leads to increasing the signal of the worst bit in the array and also realizes the full compatibility with 90nm CMOS Technology.

Original languageEnglish
Title of host publicationIEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages307-310
Number of pages4
Publication statusPublished - 2005 Dec 1
Externally publishedYes
EventIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
Duration: 2005 Dec 52005 Dec 7

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2005
ISSN (Print)0163-1918

Other

OtherIEEE International Electron Devices Meeting, 2005 IEDM
CountryUnited States
CityWashington, DC, MD
Period05/12/505/12/7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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