A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications

Takeshi Hamamoto; Yoshihiro Minami; Tomoaki Shino; Atsushi Sakamoto; Tomoki Higashi; Naoki Kusunoki; Katsuyuki Fujita; Kosuke Hatsuda; Takashi Ohsawa; Nobutoshi Aoki; Hiroyoshi Tanimoto; Mutsuo Morikado; Hiroomi Nakajima; Kazumi Inoh; Akihiro Nitayama

A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications

Takeshi Hamamoto^*, Yoshihiro Minami, Tomoaki Shino, Atsushi Sakamoto, Tomoki Higashi, Naoki Kusunoki, Katsuyuki Fujita, Kosuke Hatsuda, Takashi Ohsawa, Nobutoshi Aoki, Hiroyoshi Tanimoto, Mutsuo Morikado, Hiroomi Nakajima, Kazumi Inoh, Akihiro Nitayama

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Floating Body Cell (FBC) is a one-transistor memory cell on SOI substrate, which aims high density embedded memory on SOC. In order to verify this memory cell technology, a 128Mb SOI DRAM with FBC has been designed and successfully developed. The memory cell design, and the experimental results, such as the signal and the retention characteristics, are reviewed. The results of the fabricated SOI DRAM and the prospect as embedded memory are also discussed.

Original language	English
Title of host publication	2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06
Publication status	Published - 2006 Dec 1
Externally published	Yes
Event	Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference - Padova, Italy Duration: 2006 May 24 → 2006 May 26

Publication series

Name	2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06

Other

Other	Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference
Country/Territory	Italy
City	Padova
Period	06/5/24 → 06/5/26

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Hamamoto, T., Minami, Y., Shino, T., Sakamoto, A., Higashi, T., Kusunoki, N., Fujita, K., Hatsuda, K., Ohsawa, T., Aoki, N., Tanimoto, H., Morikado, M., Nakajima, H., Inoh, K., & Nitayama, A. (2006). A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications. In 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06 [1669372] (2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06).

A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications. / Hamamoto, Takeshi; Minami, Yoshihiro; Shino, Tomoaki et al.

2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06. 2006. 1669372 (2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hamamoto, T, Minami, Y, Shino, T, Sakamoto, A, Higashi, T, Kusunoki, N, Fujita, K, Hatsuda, K, Ohsawa, T, Aoki, N, Tanimoto, H, Morikado, M, Nakajima, H, Inoh, K & Nitayama, A 2006, A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications. in 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06., 1669372, 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06, Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference, Padova, Italy, 06/5/24.

Hamamoto T, Minami Y, Shino T, Sakamoto A, Higashi T, Kusunoki N et al. A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications. In 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06. 2006. 1669372. (2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06).

@inproceedings{2aa0799ed7de46c2af73aee6698a9512,

title = "A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications",

abstract = "Floating Body Cell (FBC) is a one-transistor memory cell on SOI substrate, which aims high density embedded memory on SOC. In order to verify this memory cell technology, a 128Mb SOI DRAM with FBC has been designed and successfully developed. The memory cell design, and the experimental results, such as the signal and the retention characteristics, are reviewed. The results of the fabricated SOI DRAM and the prospect as embedded memory are also discussed.",

author = "Takeshi Hamamoto and Yoshihiro Minami and Tomoaki Shino and Atsushi Sakamoto and Tomoki Higashi and Naoki Kusunoki and Katsuyuki Fujita and Kosuke Hatsuda and Takashi Ohsawa and Nobutoshi Aoki and Hiroyoshi Tanimoto and Mutsuo Morikado and Hiroomi Nakajima and Kazumi Inoh and Akihiro Nitayama",

year = "2006",

month = dec,

day = "1",

language = "English",

isbn = "1424400988",

series = "2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06",

booktitle = "2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06",

note = "Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference ; Conference date: 24-05-2006 Through 26-05-2006",

}

TY - GEN

T1 - A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications

AU - Hamamoto, Takeshi

AU - Minami, Yoshihiro

AU - Shino, Tomoaki

AU - Sakamoto, Atsushi

AU - Higashi, Tomoki

AU - Kusunoki, Naoki

AU - Fujita, Katsuyuki

AU - Hatsuda, Kosuke

AU - Ohsawa, Takashi

AU - Aoki, Nobutoshi

AU - Tanimoto, Hiroyoshi

AU - Morikado, Mutsuo

AU - Nakajima, Hiroomi

AU - Inoh, Kazumi

AU - Nitayama, Akihiro

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Floating Body Cell (FBC) is a one-transistor memory cell on SOI substrate, which aims high density embedded memory on SOC. In order to verify this memory cell technology, a 128Mb SOI DRAM with FBC has been designed and successfully developed. The memory cell design, and the experimental results, such as the signal and the retention characteristics, are reviewed. The results of the fabricated SOI DRAM and the prospect as embedded memory are also discussed.

AB - Floating Body Cell (FBC) is a one-transistor memory cell on SOI substrate, which aims high density embedded memory on SOC. In order to verify this memory cell technology, a 128Mb SOI DRAM with FBC has been designed and successfully developed. The memory cell design, and the experimental results, such as the signal and the retention characteristics, are reviewed. The results of the fabricated SOI DRAM and the prospect as embedded memory are also discussed.

UR - http://www.scopus.com/inward/record.url?scp=42749098765&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42749098765&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:42749098765

SN - 1424400988

SN - 9781424400980

T3 - 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06

BT - 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06

T2 - Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference

Y2 - 24 May 2006 through 26 May 2006

ER -

A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications

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