A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications

Takeshi Hamamoto, Yoshihiro Minami, Tomoaki Shino, Atsushi Sakamoto, Tomoki Higashi, Naoki Kusunoki, Katsuyuki Fujita, Kosuke Hatsuda, Takashi Ohsawa, Nobutoshi Aoki, Hiroyoshi Tanimoto, Mutsuo Morikado, Hiroomi Nakajima, Kazumi Inoh, Akihiro Nitayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Floating Body Cell (FBC) is a one-transistor memory cell on SOI substrate, which aims high density embedded memory on SOC. In order to verify this memory cell technology, a 128Mb SOI DRAM with FBC has been designed and successfully developed. The memory cell design, and the experimental results, such as the signal and the retention characteristics, are reviewed. The results of the fabricated SOI DRAM and the prospect as embedded memory are also discussed.

Original languageEnglish
Title of host publication2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06
Publication statusPublished - 2006
Externally publishedYes
EventIntegrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference - Padova, Italy
Duration: 2006 May 242006 May 26

Other

OtherIntegrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference
CountryItaly
CityPadova
Period06/5/2406/5/26

Fingerprint

Data storage equipment
Dynamic random access storage
Transistors
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Hamamoto, T., Minami, Y., Shino, T., Sakamoto, A., Higashi, T., Kusunoki, N., ... Nitayama, A. (2006). A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications. In 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06 [1669372]

A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications. / Hamamoto, Takeshi; Minami, Yoshihiro; Shino, Tomoaki; Sakamoto, Atsushi; Higashi, Tomoki; Kusunoki, Naoki; Fujita, Katsuyuki; Hatsuda, Kosuke; Ohsawa, Takashi; Aoki, Nobutoshi; Tanimoto, Hiroyoshi; Morikado, Mutsuo; Nakajima, Hiroomi; Inoh, Kazumi; Nitayama, Akihiro.

2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06. 2006. 1669372.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hamamoto, T, Minami, Y, Shino, T, Sakamoto, A, Higashi, T, Kusunoki, N, Fujita, K, Hatsuda, K, Ohsawa, T, Aoki, N, Tanimoto, H, Morikado, M, Nakajima, H, Inoh, K & Nitayama, A 2006, A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications. in 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06., 1669372, Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference, Padova, Italy, 06/5/24.
Hamamoto T, Minami Y, Shino T, Sakamoto A, Higashi T, Kusunoki N et al. A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications. In 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06. 2006. 1669372
Hamamoto, Takeshi ; Minami, Yoshihiro ; Shino, Tomoaki ; Sakamoto, Atsushi ; Higashi, Tomoki ; Kusunoki, Naoki ; Fujita, Katsuyuki ; Hatsuda, Kosuke ; Ohsawa, Takashi ; Aoki, Nobutoshi ; Tanimoto, Hiroyoshi ; Morikado, Mutsuo ; Nakajima, Hiroomi ; Inoh, Kazumi ; Nitayama, Akihiro. / A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications. 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06. 2006.
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AU - Nitayama, Akihiro

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