A gate-current model for advanced MOSFET technologies implemented into HiSIM2

Ryosuke Inagaki; Norio Sadachika; Dondee Navarro; Mitiko Miura-Mattausch; Yasuaki Inoue

doi:10.1002/tee.20235

A gate-current model for advanced MOSFET technologies implemented into HiSIM2

Ryosuke Inagaki^*, Norio Sadachika, Dondee Navarro, Mitiko Miura-Mattausch, Yasuaki Inoue

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A gate leakage current model for advanced MOSFETs has been developed and implemented into the Hiroshima-university STARC IGFET Model (HiSIM), the first complete surface-potential-based model. The model consists of four tunneling mechanisms, the gate to channel/bulk/source/drain, and requires totally 15 model parameters covering all bias conditions. Simulation results reproduce measurement for any device size and temperature without binning. Validity of the model has been tested with circuits that are sensitive to the change of stored charge due to tunneling current.

Original language	English
Pages (from-to)	64-71
Number of pages	8
Journal	IEEJ Transactions on Electrical and Electronic Engineering
Volume	3
Issue number	1
DOIs	https://doi.org/10.1002/tee.20235
Publication status	Published - 2008 Jan

Keywords

Gate current
Hisim
Leakage current
Surface potential
Tunneling current
Without binning

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1002/tee.20235

Cite this

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abstract = "A gate leakage current model for advanced MOSFETs has been developed and implemented into the Hiroshima-university STARC IGFET Model (HiSIM), the first complete surface-potential-based model. The model consists of four tunneling mechanisms, the gate to channel/bulk/source/drain, and requires totally 15 model parameters covering all bias conditions. Simulation results reproduce measurement for any device size and temperature without binning. Validity of the model has been tested with circuits that are sensitive to the change of stored charge due to tunneling current.",

keywords = "Gate current, Hisim, Leakage current, Surface potential, Tunneling current, Without binning",

author = "Ryosuke Inagaki and Norio Sadachika and Dondee Navarro and Mitiko Miura-Mattausch and Yasuaki Inoue",

year = "2008",

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T1 - A gate-current model for advanced MOSFET technologies implemented into HiSIM2

AU - Inagaki, Ryosuke

AU - Sadachika, Norio

AU - Navarro, Dondee

AU - Miura-Mattausch, Mitiko

AU - Inoue, Yasuaki

PY - 2008/1

Y1 - 2008/1

N2 - A gate leakage current model for advanced MOSFETs has been developed and implemented into the Hiroshima-university STARC IGFET Model (HiSIM), the first complete surface-potential-based model. The model consists of four tunneling mechanisms, the gate to channel/bulk/source/drain, and requires totally 15 model parameters covering all bias conditions. Simulation results reproduce measurement for any device size and temperature without binning. Validity of the model has been tested with circuits that are sensitive to the change of stored charge due to tunneling current.

AB - A gate leakage current model for advanced MOSFETs has been developed and implemented into the Hiroshima-university STARC IGFET Model (HiSIM), the first complete surface-potential-based model. The model consists of four tunneling mechanisms, the gate to channel/bulk/source/drain, and requires totally 15 model parameters covering all bias conditions. Simulation results reproduce measurement for any device size and temperature without binning. Validity of the model has been tested with circuits that are sensitive to the change of stored charge due to tunneling current.

KW - Gate current

KW - Hisim

KW - Leakage current

KW - Surface potential

KW - Tunneling current

KW - Without binning

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A gate-current model for advanced MOSFET technologies implemented into HiSIM2

Abstract

Keywords

ASJC Scopus subject areas

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