A GIDL-current model for advanced MOSFET technologies implemented into HiSIM2

Ryosuke Inagaki, Mitiko Miura-Mattausch, Yasuaki Inoue

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    A GIDL (Gate Induced Drain Leakage) current model for advanced MOSFETs has been proposed and implemented into HiSIM2, first complete surface potential based model. The model consists of one tunneling mechanism considering two tunneling currents, band to band tunneling (BTBT) and trap assisted tunneling (TAT), and requires totally 7 model parameters covering all bias conditions. Simulation results of NFETs and PFETs reproduce measurements for any device size without binning. Validity of the model has been tested with a circuit, which is sensitive to the change of the stored charge due to tunneling current.

    Original languageEnglish
    Title of host publicationICCCAS 2007 - International Conference on Communications, Circuits and Systems 2007
    Pages1057-1061
    Number of pages5
    Publication statusPublished - 2008
    EventICCCAS 2007 - International Conference on Communications, Circuits and Systems 2007 - Kokura
    Duration: 2007 Jul 112007 Jul 13

    Other

    OtherICCCAS 2007 - International Conference on Communications, Circuits and Systems 2007
    CityKokura
    Period07/7/1107/7/13

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    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    Cite this

    Inagaki, R., Miura-Mattausch, M., & Inoue, Y. (2008). A GIDL-current model for advanced MOSFET technologies implemented into HiSIM2. In ICCCAS 2007 - International Conference on Communications, Circuits and Systems 2007 (pp. 1057-1061). [4348228]