A GIDL-current model for advanced MOSFET technologies without binning

Ryosuke Inagaki, Norio Sadachika, Dondee Navarro, Mitiko Miura-Mattausch, Yasuaki Inoue

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    A GIDL (Gate Induced Drain Leakage) current model for advanced MOS-FETs is proposed and implemented into HiSIM2, complete surface potential based MOSFET model. The model considers two tunneling mechanisms, the band-to-band tunneling and the trap assisted tunneling. Totally 7 model parameters are introduced. Simulation results of NFETs and PFETs reproduce measurements for any device size without binning of model parameters. The influence of the GIDL current is investigated with circuits, which are sensitive to the change of the stored charge due to the GIDL current.

    Original languageEnglish
    Pages (from-to)93-102
    Number of pages10
    JournalIPSJ Transactions on System LSI Design Methodology
    Volume2
    DOIs
    Publication statusPublished - 2009

    Fingerprint

    Leakage currents
    Surface potential
    Field effect transistors
    Networks (circuits)

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Computer Science Applications

    Cite this

    A GIDL-current model for advanced MOSFET technologies without binning. / Inagaki, Ryosuke; Sadachika, Norio; Navarro, Dondee; Miura-Mattausch, Mitiko; Inoue, Yasuaki.

    In: IPSJ Transactions on System LSI Design Methodology, Vol. 2, 2009, p. 93-102.

    Research output: Contribution to journalArticle

    Inagaki, Ryosuke ; Sadachika, Norio ; Navarro, Dondee ; Miura-Mattausch, Mitiko ; Inoue, Yasuaki. / A GIDL-current model for advanced MOSFET technologies without binning. In: IPSJ Transactions on System LSI Design Methodology. 2009 ; Vol. 2. pp. 93-102.
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