### Abstract

Finding DC operating points of nonlinear circuits is an important and difficult task. The Newton-Raphson method adopted in the SPICE-like simulators often fails to converge to a solution. To overcome this convergence problem, homotopy methods have been studied from various viewpoints. However, most previous studies are mainly focused on the bipolar transistor circuits. Also the efficiencies of the previous homotopy methods for MOS transistor circuits are not satisfactory. Therefore, finding a more efficient homotopy method for MOS transistor circuits becomes necessary and important. This paper proposes the Newton Fixed-Point homotopy method for MOS transistor circuits and also proposes the embedding algorithm in the implementation. Numerical examples show that the proposed MOS Newton Fixed-Point homotopy methods with two embedding types are more effective for finding DC operating points of MOS transistor circuits than the conventional MOS homotopy methods. Moreover, the global convergence of the proposed Newton Fixed-Point homotopy method for MOS transistor circuits has also been proved.

Original language | English |
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Title of host publication | Proceedings - 2012 7th International Conference on Computing and Convergence Technology (ICCIT, ICEI and ICACT), ICCCT 2012 |

Pages | 1349-1352 |

Number of pages | 4 |

Publication status | Published - 2012 |

Event | 2012 7th International Conference on Computing and Convergence Technology (ICCIT, ICEI and ICACT), ICCCT 2012 - Seoul Duration: 2012 Dec 3 → 2012 Dec 5 |

### Other

Other | 2012 7th International Conference on Computing and Convergence Technology (ICCIT, ICEI and ICACT), ICCCT 2012 |
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City | Seoul |

Period | 12/12/3 → 12/12/5 |

### Fingerprint

### ASJC Scopus subject areas

- Computer Science Applications
- Software

### Cite this

*Proceedings - 2012 7th International Conference on Computing and Convergence Technology (ICCIT, ICEI and ICACT), ICCCT 2012*(pp. 1349-1352). [6530550]

**A globally convergent and highly efficient homotopy method for MOS transistor circuits.** / Niu, Dan; Jin, Zhou; Wu, Xiao; Inoue, Yasuaki.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

*Proceedings - 2012 7th International Conference on Computing and Convergence Technology (ICCIT, ICEI and ICACT), ICCCT 2012.*, 6530550, pp. 1349-1352, 2012 7th International Conference on Computing and Convergence Technology (ICCIT, ICEI and ICACT), ICCCT 2012, Seoul, 12/12/3.

}

TY - GEN

T1 - A globally convergent and highly efficient homotopy method for MOS transistor circuits

AU - Niu, Dan

AU - Jin, Zhou

AU - Wu, Xiao

AU - Inoue, Yasuaki

PY - 2012

Y1 - 2012

N2 - Finding DC operating points of nonlinear circuits is an important and difficult task. The Newton-Raphson method adopted in the SPICE-like simulators often fails to converge to a solution. To overcome this convergence problem, homotopy methods have been studied from various viewpoints. However, most previous studies are mainly focused on the bipolar transistor circuits. Also the efficiencies of the previous homotopy methods for MOS transistor circuits are not satisfactory. Therefore, finding a more efficient homotopy method for MOS transistor circuits becomes necessary and important. This paper proposes the Newton Fixed-Point homotopy method for MOS transistor circuits and also proposes the embedding algorithm in the implementation. Numerical examples show that the proposed MOS Newton Fixed-Point homotopy methods with two embedding types are more effective for finding DC operating points of MOS transistor circuits than the conventional MOS homotopy methods. Moreover, the global convergence of the proposed Newton Fixed-Point homotopy method for MOS transistor circuits has also been proved.

AB - Finding DC operating points of nonlinear circuits is an important and difficult task. The Newton-Raphson method adopted in the SPICE-like simulators often fails to converge to a solution. To overcome this convergence problem, homotopy methods have been studied from various viewpoints. However, most previous studies are mainly focused on the bipolar transistor circuits. Also the efficiencies of the previous homotopy methods for MOS transistor circuits are not satisfactory. Therefore, finding a more efficient homotopy method for MOS transistor circuits becomes necessary and important. This paper proposes the Newton Fixed-Point homotopy method for MOS transistor circuits and also proposes the embedding algorithm in the implementation. Numerical examples show that the proposed MOS Newton Fixed-Point homotopy methods with two embedding types are more effective for finding DC operating points of MOS transistor circuits than the conventional MOS homotopy methods. Moreover, the global convergence of the proposed Newton Fixed-Point homotopy method for MOS transistor circuits has also been proved.

UR - http://www.scopus.com/inward/record.url?scp=84881131501&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84881131501&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9788994364216

SP - 1349

EP - 1352

BT - Proceedings - 2012 7th International Conference on Computing and Convergence Technology (ICCIT, ICEI and ICACT), ICCCT 2012

ER -