A heteroepitaxial multi-atomic-layer system of graphene and h-BN

C. Oshima, N. Tanaka, A. Itoh, E. Rokuta, K. Yamashita, T. Sakurai

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Abstract

Multi-atomic-layer systems stacked with monolayer graphene/monolayer h-BN/Ni(111) have been grown in an epitaxial manner. The graphene overlayer formation changes drastically the interfacial interaction between the h-BN layer and Ni(111). As a result, a peculiar property of the monolayer h-BN on Ni(111) changes to a bulklike one. The π-d orbital hybridization at the interface disappears. Accordingly, a metallic character of monolayer h-BN disappears, the soft TO ⊥ phonon returns to the bulk one, and the reduced lattice constant of h-BN on Ni(111) also returns to the bulk one. In contrast, the h-BN overlayer formation does not change the interface between the monolayer graphene and Ni(111). From those data, the strength order of interfacial bonds changes as follows: graphene/Ni(111) > graphene/h-BN > h-BN/Ni(111).

Original languageEnglish
Pages (from-to)521-525
Number of pages5
JournalSurface Review and Letters
Volume7
Issue number5-6
DOIs
Publication statusPublished - 2000

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ASJC Scopus subject areas

  • Materials Science(all)
  • Surfaces and Interfaces
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Oshima, C., Tanaka, N., Itoh, A., Rokuta, E., Yamashita, K., & Sakurai, T. (2000). A heteroepitaxial multi-atomic-layer system of graphene and h-BN. Surface Review and Letters, 7(5-6), 521-525. https://doi.org/10.1016/S0218-625X(00)00068-3