A high mobility ambipolar field effect transistor using a 2,6-diphenylbenzo[1,2-b

4,5-b ′]diselenophene/fullerene double layer

Shohei Kinoshita, Tomo Sakanoue, Masayuki Yahiro, Kazuo Takimiya, Hideaki Ebata, Masaaki Ikeda, Hirokazu Kuwabara, Chihaya Adachi

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A high mobility ambipolar field effect transistor (FET) was fabricated using a double-layer structure composed of 2,6-diphenylbenzo[1,2-b:4,5-b′]diselenophene (DPh-BDS) as a p-type layer and fullerene (C60) as an n-type layer. The FET characteristics showed a large dependence on the DPh-BDS thickness, and excellent ambipolar behavior with the maximum electron and hole mobilities of μe = 3.0 cm2 / V s and μh = 0.10 cm2 / V s was obtained with the optimum DPh-BDS thickness of 10-20 nm. The result indicates that the μe of C60 was considerably enhanced by keeping it away from the electron traps on the SiO2 surface and by improving the crystalline texture of the C60, which was achieved by the underlying DPh-BDS buffer layer having a rather high hole mobility on the SiO2 layer.

Original languageEnglish
Pages (from-to)114-117
Number of pages4
JournalSolid State Communications
Volume145
Issue number3
DOIs
Publication statusPublished - 2008 Jan
Externally publishedYes

Fingerprint

Fullerenes
Hole mobility
Field effect transistors
fullerenes
field effect transistors
Electron traps
Electron mobility
Buffer layers
hole mobility
Textures
Crystalline materials
electron mobility
textures
buffers
traps
electrons
fullerene C60

Keywords

  • A. Organic semiconductor
  • D. Ambipolar
  • D. FET
  • D. High mobility

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

A high mobility ambipolar field effect transistor using a 2,6-diphenylbenzo[1,2-b : 4,5-b ′]diselenophene/fullerene double layer. / Kinoshita, Shohei; Sakanoue, Tomo; Yahiro, Masayuki; Takimiya, Kazuo; Ebata, Hideaki; Ikeda, Masaaki; Kuwabara, Hirokazu; Adachi, Chihaya.

In: Solid State Communications, Vol. 145, No. 3, 01.2008, p. 114-117.

Research output: Contribution to journalArticle

Kinoshita, S, Sakanoue, T, Yahiro, M, Takimiya, K, Ebata, H, Ikeda, M, Kuwabara, H & Adachi, C 2008, 'A high mobility ambipolar field effect transistor using a 2,6-diphenylbenzo[1,2-b: 4,5-b ′]diselenophene/fullerene double layer', Solid State Communications, vol. 145, no. 3, pp. 114-117. https://doi.org/10.1016/j.ssc.2007.10.017
Kinoshita, Shohei ; Sakanoue, Tomo ; Yahiro, Masayuki ; Takimiya, Kazuo ; Ebata, Hideaki ; Ikeda, Masaaki ; Kuwabara, Hirokazu ; Adachi, Chihaya. / A high mobility ambipolar field effect transistor using a 2,6-diphenylbenzo[1,2-b : 4,5-b ′]diselenophene/fullerene double layer. In: Solid State Communications. 2008 ; Vol. 145, No. 3. pp. 114-117.
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