A highly reliable gate/n- overlapped transistor for mega-bit DRAMs

M. Nagatomo, Y. Okumura, K. Mitsui, I. Ogoh, H. Genjoh, Masahide Inuishi, T. Matsukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A noble gate/N- overlapped Tr. fabricated using oblique rotating ion implantation technique was developed. It is confirmed that this Tr. meets high performance M bit DRAMs' requirements, that is, high drain current, enough punchthrough voltage and low substrate current. The mechanism of this Tr.'s action is analyzed by simulation and is concluded that peak position of electric field is located far from the drain current pass in this Tr.'s structure. The maximum electric field is also relaxed by formation of N- layer using oblique ion implantation.

Original languageEnglish
Title of host publicationESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference
PublisherIEEE Computer Society
Pages923-926
Number of pages4
ISBN (Electronic)0387510001
ISBN (Print)9780387510002
Publication statusPublished - 1989
Externally publishedYes
Event19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany
Duration: 1989 Sep 111989 Sep 14

Other

Other19th European Solid State Device Research Conference, ESSDERC 1989
CountryGermany
CityBerlin
Period89/9/1189/9/14

Fingerprint

Dynamic random access storage
Drain current
Ion implantation
Transistors
Electric fields
Electric potential
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Nagatomo, M., Okumura, Y., Mitsui, K., Ogoh, I., Genjoh, H., Inuishi, M., & Matsukawa, T. (1989). A highly reliable gate/n- overlapped transistor for mega-bit DRAMs. In ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference (pp. 923-926). [5437066] IEEE Computer Society.

A highly reliable gate/n- overlapped transistor for mega-bit DRAMs. / Nagatomo, M.; Okumura, Y.; Mitsui, K.; Ogoh, I.; Genjoh, H.; Inuishi, Masahide; Matsukawa, T.

ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. IEEE Computer Society, 1989. p. 923-926 5437066.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nagatomo, M, Okumura, Y, Mitsui, K, Ogoh, I, Genjoh, H, Inuishi, M & Matsukawa, T 1989, A highly reliable gate/n- overlapped transistor for mega-bit DRAMs. in ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference., 5437066, IEEE Computer Society, pp. 923-926, 19th European Solid State Device Research Conference, ESSDERC 1989, Berlin, Germany, 89/9/11.
Nagatomo M, Okumura Y, Mitsui K, Ogoh I, Genjoh H, Inuishi M et al. A highly reliable gate/n- overlapped transistor for mega-bit DRAMs. In ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. IEEE Computer Society. 1989. p. 923-926. 5437066
Nagatomo, M. ; Okumura, Y. ; Mitsui, K. ; Ogoh, I. ; Genjoh, H. ; Inuishi, Masahide ; Matsukawa, T. / A highly reliable gate/n- overlapped transistor for mega-bit DRAMs. ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. IEEE Computer Society, 1989. pp. 923-926
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